FQD10N20LTF datasheet, PDF - EEWORLD Datasheet

FQD10N20LTF: DescriptionMOSFET N-CH 200V 7.6A DPAK; Categorysemiconductor Discrete semiconductor; File Size212KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET N-CH 200V 7.6A DPAK

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	200V
Current - Continuous Drain (Id) at 25°C	7.6A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	5V，10V
Rds On (maximum value) when different Id, Vgs	360 milliohms @ 3.8A, 10V
Vgs (th) (maximum value) when different Id	2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	17nC @ 5V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	830pF @ 25V
FET function	-
Power dissipation (maximum)	2.5W（Ta），51W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	TO-252，（D-Pak）
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63

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