MSMLJ120CAE3/TR datasheet, PDF

MSMLJ120CAE3/TR: DescriptionTVS; CategoryDiscrete semiconductor diode; File Size895KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MSMLJ120CAE3/TR Overview

TVS

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	R-PDSO-C2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	147 V
Minimum breakdown voltage	133 V
Breakdown voltage nominal value	140 V
Maximum clamping voltage	193 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	250
polarity	BIDIRECTIONAL
Maximum power dissipation	1.61 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	120 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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