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PMZ320UPEYL

Description
MOSFET P-CH 30V SOT883
CategoryDiscrete semiconductor    The transistor   
File Size708KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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PMZ320UPEYL Overview

MOSFET P-CH 30V SOT883

PMZ320UPEYL Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeDFN
package instructionDFN1006-3, 3 PIN
Contacts3
Manufacturer packaging codeSOT883
Reach Compliance Codecompliant
Samacsys DescriptionMOSFET 30V P-Channel Trench MOSFET
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.51 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

PMZ320UPEYL Related Products

PMZ320UPEYL 934068611315
Description MOSFET P-CH 30V SOT883 MOSFET P-CH 30V SOT883
Maker Nexperia Nexperia
package instruction DFN1006-3, 3 PIN DFN1006-3, 3 PIN
Reach Compliance Code compliant compliant
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 1 A 1 A
Maximum drain-source on-resistance 0.51 Ω 0.51 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PBCC-N3 R-PBCC-N3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Guideline IEC-60134 IEC-60134
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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