MOSFET P-CH 30V SOT883
Parameter Name | Attribute value |
Brand Name | Nexperia |
Maker | Nexperia |
Parts packaging code | DFN |
package instruction | DFN1006-3, 3 PIN |
Contacts | 3 |
Manufacturer packaging code | SOT883 |
Reach Compliance Code | compliant |
Samacsys Description | MOSFET 30V P-Channel Trench MOSFET |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 1 A |
Maximum drain-source on-resistance | 0.51 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PBCC-N3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | P-CHANNEL |
Guideline | IEC-60134 |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
PMZ320UPEYL | 934068611315 | |
---|---|---|
Description | MOSFET P-CH 30V SOT883 | MOSFET P-CH 30V SOT883 |
Maker | Nexperia | Nexperia |
package instruction | DFN1006-3, 3 PIN | DFN1006-3, 3 PIN |
Reach Compliance Code | compliant | compliant |
Shell connection | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V | 30 V |
Maximum drain current (ID) | 1 A | 1 A |
Maximum drain-source on-resistance | 0.51 Ω | 0.51 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PBCC-N3 | R-PBCC-N3 |
Humidity sensitivity level | 1 | 1 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | CHIP CARRIER | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL | P-CHANNEL |
Guideline | IEC-60134 | IEC-60134 |
surface mount | YES | YES |
Terminal form | NO LEAD | NO LEAD |
Terminal location | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | 30 | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |