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SIUD412ED-T1-GE3

Description
MOSFET N-CH 12V 500MA PWRPAK0806
Categorysemiconductor    Discrete semiconductor   
File Size221KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIUD412ED-T1-GE3 Overview

MOSFET N-CH 12V 500MA PWRPAK0806

SIUD412ED-T1-GE3 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)12V
Current - Continuous Drain (Id) at 25°C500mA(Tc)
Drive voltage (maximum Rds On, minimum Rds On)1.2V,4.5V
Rds On (maximum value) when different Id, Vgs340 milliohms @ 500mA, 4.5V
Vgs (th) (maximum value) when different Id900mV @ 250µA
Gate charge (Qg) at different Vgs (maximum value).71nC @ 4.5V
Vgs (maximum value)±5V
Input capacitance (Ciss) at different Vds (maximum value)21pF @ 6V
FET function-
Power dissipation (maximum)1.25W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPowerPAK® 0806
Package/casingPowerPAK® 0806
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