IPP530N15N3GXKSA1 datasheet, PDF

IPP530N15N3GXKSA1: DescriptionMOSFET N-CH 150V 21A TO220-3; CategoryDiscrete semiconductor The transistor; File Size962KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-CH 150V 21A TO220-3

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	18 weeks
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	21 A
Maximum drain-source on-resistance	0.053 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	84 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	IPP530N15N3GXKSA1	IPP530N15N3 G	IPB530N15N3 G	IPI530N15N3 G	IPD530N15N3 G	IPB530N15N3GATMA1	SP001127830
Description	MOSFET N-CH 150V 21A TO220-3	mosFET cool mos	mosfet N-channel mosfet 20-200v	The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.	The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.	MOSFET N-CH 150V 21A TO263-3	Power Field-Effect Transistor,

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