SIR108DP-T1-RE3 datasheet, PDF

SIR108DP-T1-RE3: DescriptionMOSFET N-CHAN 100V POWERPAK SO-8; Categorysemiconductor Discrete semiconductor; File Size386KB，13 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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MOSFET N-CHAN 100V POWERPAK SO-8

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	12.4A（Ta），45A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	7.5V，10V
Rds On (maximum value) when different Id, Vgs	13.5 milliohms @ 10A, 10V
Vgs (th) (maximum value) when different Id	3.6V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	41.5nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	2060pF @ 50V
FET function	-
Power dissipation (maximum)	5W（Ta），65.7W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	PowerPAK® SO-8
Package/casing	PowerPAK® SO-8

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