MOSFET N-CHAN 30V POWERPAK 1212-
Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 30V |
Current - Continuous Drain (Id) at 25°C | 50.5A(Ta),80A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
Rds On (maximum value) when different Id, Vgs | 1.2 milliohms @ 15A, 10V |
Vgs (th) (maximum value) when different Id | 2.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 93nC @ 10V |
Vgs (maximum value) | +16V,-12V |
Input capacitance (Ciss) at different Vds (maximum value) | 4460pF @ 15V |
FET function | - |
Power dissipation (maximum) | 5W(Ta),65.7W(Tc) |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Supplier device packaging | PowerPAK® 1212-8S |
Package/casing | PowerPAK® 1212-8S |