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SISS04DN-T1-GE3

Description
MOSFET N-CHAN 30V POWERPAK 1212-
Categorysemiconductor    Discrete semiconductor   
File Size283KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SISS04DN-T1-GE3 Overview

MOSFET N-CHAN 30V POWERPAK 1212-

SISS04DN-T1-GE3 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C50.5A(Ta),80A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs1.2 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)93nC @ 10V
Vgs (maximum value)+16V,-12V
Input capacitance (Ciss) at different Vds (maximum value)4460pF @ 15V
FET function-
Power dissipation (maximum)5W(Ta),65.7W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPowerPAK® 1212-8S
Package/casingPowerPAK® 1212-8S
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