AO7412
30V N-Channel MOSFET
General Description
The AO7412 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V, in the small SOT323 footprint. It
can be used for a wide variety of applications, including
load switching, low current inverters and low current DC-
DC converters.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
30V
1.7A
< 55mΩ
< 65mΩ
< 85mΩ
SC70-6L
(SOT363)
Top View
Bottom View
D
D
G
Top View
1
2
3
6
5
4
D
D
S
G
D
S
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
30
±12
1.7
1.3
15
0.35
0.22
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°
C/W
°
C/W
°
C/W
Rev 2: August 2011
www.aosmd.com
Page 1 of 5
AO7412
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=1.7A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=4.5V, I
D
=1.5A
V
GS
=2.5V, I
D
=1A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=1.7A
I
S
=1A,V
GS
=0V
0.5
15
45
70
50
61
14
0.75
1
1.5
185
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
25
10
2.1
235
35
18
4.3
10
V
GS
=10V, V
DS
=15V, I
D
=1.7A
4.7
0.95
1.6
3.5
V
GS
=10V, V
DS
=15V, R
L
=8Ω,
R
GEN
=3Ω
I
F
=1.7A, dI/dt=100A/µs
1in
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
±100
1
1.5
55
84
65
85
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
285
45
25
6.5
12
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=1.7A, dI/dt=100A/µs
1.5
17.5
2.5
8.5
2.6
11
3.5
ns
nC
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: August 2011
www.aosmd.com
Page 2 of 5
AO7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
3V
12
4.5V
9
I
D
(A)
I
D
(A)
6
2.5V
8
10
V
DS
=5V
6
V
GS
=2.0V
3
4
125°C
2
25°C
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
R
DS(ON)
(mΩ)
Ω
60
V
GS
=4.5V
50
40
30
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
4
V
GS
=2.5V
Normalized On-Resistance
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=2.5V
I
D
=1A
V
GS
=4.5V
I
D
=1.5A
V
GS
=10V
17
I
D
=1.7A
5
2
10
V
GS
=10V
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
120
I
D
=1.7A
1.0E+02
1.0E+01
100
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
1.0E+00
80
1.0E-01
1.0E-02
1.0E-03
40
25°C
20
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
40
60
Rev 2: August 2011
www.aosmd.com
Page 3 of 5
AO7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=1.7A
8
300
Capacitance (pF)
V
GS
(Volts)
6
250
200
150
100
2
50
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
C
rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
400
350
4
100.0
20
T
A
=25°C
10.0
15
I
D
(Amps)
100µs
1ms
10ms
Power (W)
R
DS(ON)
limited
1.0
10µs
10
0.1
T
J(Max)
=150°C
T
A
=25°C
5
10s
DC
0
0.00001
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.0
0.01
0.1
1
V
DS
(Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=425°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
P
D
T
on
T
T
Rev 2: August 2011
www.aosmd.com
Page 4 of 5
AO7412
Gate Charge Test Circuit & Waveform
Vgs
Qg
+
VDC
10V
VDC
-
DUT
Vgs
Ig
+
Vds
-
Qgs
Qgd
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
Vgs
Rg
DUT
+
VDC
90 %
Vdd
1 0%
V gs
-
t
d (o n )
t
o n
t
r
t
d (o ff)
t
o ff
t
f
Vgs
D iode R ecovery T est C ircuit & W aveform s
V ds +
DUT
V gs
t
rr
Q
rr
= -
Idt
V ds -
Isd
V gs
L
Isd
I
F
dI/dt
I
RM
V dd
+
VD C
V dd
V ds
Ig
-
Rev 2: August 2011
www.aosmd.com
Page 5 of 5
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