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D2SB20HD2G

Description
BRIDGE RECT 1PHASE 200V 2A GBL
CategoryDiscrete semiconductor    diode   
File Size192KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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D2SB20HD2G Overview

BRIDGE RECT 1PHASE 200V 2A GBL

D2SB20HD2G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current80 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
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