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NGTD30T120F2SWK

Description
IGBT TRENCH FIELD STOP 1200V DIE
Categorysemiconductor    Discrete semiconductor   
File Size344KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NGTD30T120F2SWK Overview

IGBT TRENCH FIELD STOP 1200V DIE

NGTD30T120F2SWK Parametric

Parameter NameAttribute value
IGBT typeTrench type field cutoff
Voltage - collector-emitter breakdown (maximum)1200V
Pulse current - collector (Icm)200A
Vce(on) when different Vge,Ic2.4V @ 15V,40A
switching energy-
input typestandard
Td (on/off) value at 25°C-
Test Conditions-
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Package/casingMold
Supplier device packagingMold

NGTD30T120F2SWK Related Products

NGTD30T120F2SWK NGTD30T120F2WP
Description IGBT TRENCH FIELD STOP 1200V DIE IGBT TRENCH FIELD STOP 1200V DIE
IGBT type Trench type field cutoff Trench type field cutoff
Voltage - collector-emitter breakdown (maximum) 1200V 1200V
Pulse current - collector (Icm) 200A 200A
Vce(on) when different Vge,Ic 2.4V @ 15V,40A 2.4V @ 15V,40A
input type standard standard
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount surface mount
Package/casing Mold Mold
Supplier device packaging Mold Mold

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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