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MT5C1009SOJ-55L883

Description
Standard SRAM, 128KX8, CMOS, CDSO32, CERAMIC, SOJ-32
Categorystorage   
File Size194KB,17 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

MT5C1009SOJ-55L883 Overview

Standard SRAM, 128KX8, CMOS, CDSO32, CERAMIC, SOJ-32

MT5C1009SOJ-55L883 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicross
Parts packaging codeSOJ
package instructionSOJ,
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Is SamacsysN
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY
JESD-30 codeR-CDSO-J32
JESD-609 codee0
length21.0058 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height4.191 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width11.1125 mm
Base Number Matches1
SRAM
MT5C1009
128K x 8 SRAM
WITH CHIP & OUTPUT ENABLE
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-89598
•MIL-STD-883
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN ASSIGNMENT
(Top View)
32-Pin DIP (C, CW)
32-Pin SOJ (SOJ)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
V
SS
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
FEATURES
Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power CMOS process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\ and OE\ options.
All inputs and outputs are TTL compatible
32-Pin LCC (ECA)
4 3 2 1 32 31 30
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)•
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
Ceramic SOJ
• 2V data retention/low power
MARKING
-12 (IT only)
-15
-20
-25
-35
-45
-55*
-70*
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
5
6
7
8
9
10
11
12
13
A12
A14
6
A10
NC
V
CC
A15
CE2
NC
32-Pin Flat Pack (F)
29
28
27
26
25
24
23
22
21
WE
\
A13
A8
A9
A11
OE
\
A10
CE1
\
DQ8
14 15 16 17 18 19 20
DQ2
DQ3
V
SS
DQ4
DQ5
DQ6
DQ7
GENERAL DESCRIPTION
The MT5C1009 is a 1,048,576-bit high-speed CMOS
static RAM organized as 131,072 words by 8 bits. This device
uses 8 common input and output lines and has an output en-
able pin which operate faster than address access times during
READ cycle.
For design flexibility in high-speed memory applica-
tions, this device offers chip enable (CE\) and output enable
(OE\) features. These enhancements can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is ac-
complished when WE\ remains HIGH and CE\ and OE\ go
LOW. The devices offer a reduced power standby mode when
disabled, allowing system designs to achieve low standby power
requirements.
The “L” version offers a 2V data retention mode,
reducing current consumption to 2mW maximum.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible. It is par-
ticularly well suited for use in high-density, high-speed system
applications.
C
CW
EC
ECA
F
DCJ
SOJ
L
No. 111
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.micross.com
MT5C1009
Rev. 6.2 01/10
Micross Components reserves the right to change products or specifications without notice.
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