IRC840-017PBF datasheet, PDF - EEWORLD Datasheet

IRC840-017PBF: DescriptionPower Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN; CategoryThe transistor; File Size38KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

Download Datasheet Parametric View All

IRC840-017PBF Overview

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-220
package instruction	FLANGE MOUNT, R-PSFM-T5
Contacts	5
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T5
JESD-609 code	e2
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components