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ITT3502D

Description
Wide Band Low Power Amplifier,
CategoryRadio frequency and microwave   
File Size40KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

ITT3502D Overview

Wide Band Low Power Amplifier,

ITT3502D Parametric

Parameter NameAttribute value
MakerMACOM
Reach Compliance Codeunknown
Is SamacsysN
RF/Microwave Device TypesWIDE BAND LOW POWER
Base Number Matches1
Low Noise Driver Amplifier Die (11.0 – 16.0 GHz)
ITT3502D
FEATURES
CW or Pulsed Operation
2.7 dB Typical Noise Figure
11 dB Typical Gain
12 dBm Typical P
1dB
25 dBm Typical IP
3
50
Input/Output Impedance
Self-Aligned MSAG
®
MESFET Process
V
DD
RF
IN
RF
OUT
V
GG
Functional Schematic
DESCRIPTION
The ITT3502D is a two stage, single ended MMIC
low noise amplifier fabricated using GaAsTEK’s
mature GaAs Self-Aligned MSAG® MESFET
Process. This product is fully matched to 50
ohms on both the input and the output. It is
intended for use as a gain block or a low noise
amplifier.
MAXIMUM RATINGS
(T
Rating
DC Drain Supply Voltage
DC Gate Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
A
= 25 °C unless otherwise noted)
Symbol
V
DD
V
GG
P
IN
T
J
T
STG
Value
8
-4
20
150
-40 to +150
Unit
Vdc
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
=3.0 V, V
GG
-0.6V (set to 25%I
DSS
), P
IN
= -20 dBm, T
A
=25 °C
Characteristic
Frequency
Output Power
(fixed –0.6V bias)
Noise Figure
Gain
Gain Flatness Over Frequency
Drain Current
(small signal)
Input VSWR
Output VSWR
Third-Order Intercept Point
Thermal Resistance
(Junction of FET to base of GaAs)
Symbol
ƒ
P
1dB
NF
G
I
DS
IP
3
R
TH
Min
11.0
9
Typ
12
2.7
11
+/- 1.0
30
3:1
2:1
25
94
Max
16.0
3.4
13
50
Unit
GHz
dBm
dB
dB
dB
mA
dBm
°C/W
Specifications Subject to Change Without Notice
902190 D, August 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
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