Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SPANSION |
Parts packaging code | BGA |
package instruction | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 |
Contacts | 84 |
Reach Compliance Code | unknown |
Maximum access time | 80 ns |
Other features | PSRAM IS ORGANIZED AS 2M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE |
JESD-30 code | R-PBGA-B84 |
JESD-609 code | e1 |
length | 11.6 mm |
memory density | 134217728 bit |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+PSRAM |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 84 |
word count | 8388608 words |
character code | 8000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -25 °C |
organize | 8MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA84,10X12,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.8 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum standby current | 0.00007 A |
Maximum slew rate | 0.054 mA |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
width | 8 mm |
Base Number Matches | 1 |