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7016S35JG

Description
Dual-Port SRAM, 16KX9, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68
Categorystorage    storage   
File Size353KB,21 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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7016S35JG Overview

Dual-Port SRAM, 16KX9, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-68

7016S35JG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeLCC
package instructionQCCJ, LDCC68,1.0SQ
Contacts68
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeS-PQCC-J68
JESD-609 codee3
length24.2062 mm
memory density147456 bit
Memory IC TypeDUAL-PORT SRAM
memory width9
Humidity sensitivity level1
Number of functions1
Number of ports2
Number of terminals68
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16KX9
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC68,1.0SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.015 A
Minimum standby current4.5 V
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width24.2062 mm
Base Number Matches1

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