F4-3L50R07W2H3F_B11
EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC
EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC
J
V
CES
= 650V
I
C nom
= 50A / I
CRM
= 100A
TypischeAnwendungen
• 3-Level-Applikationen
• Motorantriebe
• SolarAnwendungen
• USV-Systeme
ElektrischeEigenschaften
• CoolSiC(TM)SchottkyDiodeGen5
• HighSpeedIGBTH3
• NiedrigeSchaltverluste
MechanischeEigenschaften
• 3kVAC1minIsolationsfestigkeit
•
Al
2
O
3
Substrat mit kleinem thermischen
Widerstand
• KompaktesDesign
• PressFITVerbindungstechnik
•
Robuste Montage durch integrierte
Befestigungsklammern
TypicalApplications
• 3-level-applications
• Motordrives
• Solarapplications
• UPSsystems
ElectricalFeatures
• CoolSiC(TM)Schottkydiodegen5
• HighspeedIGBTH3
• Lowswitchinglosses
MechanicalFeatures
• 3kVAC1mininsulation
• Al
2
O
3
substratewithlowthermalresistance
• Compactdesign
• PressFITcontacttechnology
•
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.1
2017-03-31
F4-3L50R07W2H3F_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
H
= 25°C, T
vj max
= 175°C
t
P
= 1 ms
V
CES
650
50
100
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
0,037
0,037
0,037
0,042
0,044
0,047
0,255
0,28
0,28
0,058
0,064
0,066
0,96
1,20
1,25
1,20
1,60
1,70
330
1,40
-40
150
5,00
typ.
1,45
1,60
1,70
5,80
0,50
0,0
3,10
0,095
1,0
100
max.
1,80
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
K/W
°C
V
A
A
V
I
C nom
I
CRM
V
GES
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
I
C
= 0,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 650 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 16
Ω
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 16
Ω
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 16
Ω
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 16
Ω
6,50
t
r
t
d off
t
f
I
C
= 50 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 1100 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 16
Ω
T
vj
= 150°C
I
C
= 50 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3600 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 16
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
P
≤
6 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJH
T
vj op
Datasheet
2
V3.1
2017-03-31
F4-3L50R07W2H3F_B11
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
650
30
60
90,0
82,0
typ.
1,60
1,55
1,50
20,0
26,0
28,0
1,20
2,10
2,50
0,22
0,45
0,53
2,60
-40
150
max.
2,00
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
K/W
°C
V
A
A
A²s
A²s
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
F
= 30 A, V
GE
= 0 V
I
F
= 30 A, V
GE
= 0 V
I
F
= 30 A, V
GE
= 0 V
I
F
= 30 A, - di
F
/dt = 1100 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
I
F
= 30 A, - di
F
/dt = 1100 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
I
F
= 30 A, - di
F
/dt = 1100 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
proDiode/perdiode
I
RM
Q
r
E
rec
R
thJH
T
vj op
Datasheet
3
V3.1
2017-03-31
F4-3L50R07W2H3F_B11
IGBT,3-Level/IGBT,3-Level
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
H
= 25°C, T
vj max
= 175°C
t
P
= 1 ms
V
CES
650
30
60
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
0,03
0,03
0,031
0,035
0,036
0,05
0,175
0,19
0,20
0,019
0,038
0,043
0,38
0,42
0,42
0,42
0,64
0,71
160
2,15
-40
150
5,00
typ.
1,55
1,80
1,85
5,80
0,30
0,0
1,65
0,051
1,0
100
max.
1,95
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
K/W
°C
V
A
A
V
I
C nom
I
CRM
V
GES
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 30 A, V
GE
= 15 V
I
C
= 30 A, V
GE
= 15 V
I
C
= 30 A, V
GE
= 15 V
I
C
= 0,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 650 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 30 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 20
Ω
I
C
= 30 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 20
Ω
I
C
= 30 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 20
Ω
I
C
= 30 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 20
Ω
6,50
t
r
t
d off
t
f
I
C
= 30 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 830 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 20
Ω
T
vj
= 150°C
I
C
= 30 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 5400 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 20
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
P
≤
5 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJH
T
vj op
Datasheet
4
V3.1
2017-03-31
F4-3L50R07W2H3F_B11
Diode,3-Level/Diode,3-Level
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
650
10
20
4,50
typ.
1,45
1,60
1,65
6,30
6,80
6,90
0,22
0,37
0,40
0,01
0,01
0,01
3,92
-40
150
max.
1,85
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
K/W
°C
V
A
A
A²s
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
F
= 10 A, V
GE
= 0 V
I
F
= 10 A, V
GE
= 0 V
I
F
= 10 A, V
GE
= 0 V
I
F
= 10 A, - di
F
/dt = 400 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= 15 V
I
F
= 10 A, - di
F
/dt = 400 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= 15 V
I
F
= 10 A, - di
F
/dt = 400 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= 15 V
proDiode/perdiode
I
RM
Q
r
E
rec
R
thJH
T
vj op
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
AbweichungvonR100
DeviationofR100
Verlustleistung
Powerdissipation
B-Wert
B-value
B-Wert
B-value
B-Wert
B-value
T
NTC
= 25°C
T
NTC
= 100°C, R
100
= 493
Ω
T
NTC
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
3375
3411
3433
-5
min.
typ.
5,00
5
20,0
max.
kΩ
%
mW
K
K
K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
Datasheet
5
V3.1
2017-03-31
Microcontroller MCU
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