IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast
recoveryfullcurrentratedanti-parallelEmitterControlleddiode
Features:
HighspeedH3technologyoffers:
•Highefficiencyinhardswitchingandresonanttopologies
•10µsecshortcircuitwithstandtimeatT
vj
=175°C
•Easyparallelingcapabilityduetopositivetemperature
coefficientinV
CEsat
•LowEMI
•LowGateChargeQ
G
•Verysoft,fastrecoveryfullcurrentanti-paralleldiode
•MaximumjunctiontemperatureT
vjmax
=175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•IndustrialUPS
•Charger
•EnergyStorage
•Three-levelSolarStringInverter
•Welding
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
C
G
E
KeyPerformanceandPackageParameters
Type
IKQ75N120CH3
V
CE
1200V
I
C
75A
V
CEsat
,T
vj
=25°C
2V
T
vjmax
175°C
Marking
K75MCH3
Package
PG-TO247-3-46
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.2
2017-06-09
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
V2.2
2017-06-09
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=134°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤1200V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
Short circuit withstand time
V
GE
=15.0V,V
CC
≤600V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=175°C
PowerdissipationT
C
=25°C
PowerdissipationT
C
=134°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
1)
junction - case
Diode thermal resistance,
1)
junction - case
Thermal resistance
junction - ambient
R
th(j-C)
R
th(j-C)
R
th(j-a)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
1200
150.0
75.0
300.0
300.0
150.0
75.0
300.0
±20
±30
Unit
V
A
A
A
A
A
V
t
SC
10
P
tot
T
vj
T
stg
938.0
256.0
-40...+175
-55...+150
260
µs
W
°C
°C
°C
Value
min.
typ.
max.
Unit
-
-
-
-
-
-
0.16
0.28
40
K/W
K/W
K/W
1)
Thermal resistance of thermal grease R
th(c-s)
(case to heat sink) of more than 0.1K/W not included.
Datasheet
3
V2.2
2017-06-09
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.50mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=75.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=75.0A
T
vj
=25°C
T
vj
=175°C
I
C
=1.88mA,V
CE
=V
GE
V
CE
=1200V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=75.0A
1200
-
-
-
-
5.1
-
-
-
-
-
2.00
2.50
1.90
1.85
5.8
-
5000
-
26.0
-
2.35
-
2.30
-
6.5
450
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=960V,I
C
=75.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
4856
505
290
370.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=600V,I
C
=75.0A,
V
GE
=0.0/15.0V,
R
G(on)
=6.0Ω,R
G(off)
=6.0Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
34
47
282
29
6.40
2.80
9.20
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Datasheet
4
V2.2
2017-06-09
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=600V,
I
F
=75.0A,
di
F
/dt=600A/µs
-
-
-
-
370
5.10
25.0
-170
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=175°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=600V,
I
F
=75.0A,
di
F
/dt=600A/µs
-
-
-
-
640
12.30
34.0
-100
-
-
-
-
ns
µC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=175°C,
V
CC
=600V,I
C
=75.0A,
V
GE
=0.0/15.0V,
R
G(on)
=6.0Ω,R
G(off)
=6.0Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
33
48
388
66
10.20
6.00
16.20
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode peak reverse recovery current
I
rrm
di
rr
/dt
Datasheet
5
V2.2
2017-06-09
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