MOSFET 650V/30mOhm SiC CASCODE G3
| Parameter Name | Attribute value |
| Product Attribute | Attribute Value |
| Manufacturer | UnitedSiC |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | SiC |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 85 A |
| Rds On - Drain-Source Resistance | 35 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Vgs - Gate-Source Voltage | - 25 V to + 25 V |
| Qg - Gate Charge | 51 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Pd - Power Dissipation | 441 W |
| Channel Mode | Enhancement |
| Fall Time | 17 ns |
| Rise Time | 26 ns |
| Factory Pack Quantity | 600 |
| Typical Turn-Off Delay Time | 63 ns |
| Typical Turn-On Delay Time | 44 ns |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
