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HFA08TB60S

Description
8 A, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size193KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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8 A, SILICON, RECTIFIER DIODE, TO-263AB

HFA08TB60S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.1 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.055 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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