NTF3055L108 datasheet, PDF - EEWORLD Datasheet

NTF3055L108: Description3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA; Categorysemiconductor Discrete semiconductor; File Size77KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTF3055L108 Overview

3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	60 V
Processing package description	ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	3 A
Rated avalanche energy	74 mJ
Maximum drain on-resistance	0.1200 ohm
Maximum leakage current pulse	9 A

	NTF3055L108	NTF3055L108D
Description	3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA	3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Number of terminals	4	4
Minimum breakdown voltage	60 V	60 V
Processing package description	ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN	ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin
Terminal location	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply
Maximum leakage current	3 A	3 A
Rated avalanche energy	74 mJ	74 mJ
Maximum drain on-resistance	0.1200 ohm	0.1200 ohm
Maximum leakage current pulse	9 A	9 A

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