18 A, 100 V, 0.0725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Parameter Name | Attribute value |
Number of terminals | 3 |
Minimum breakdown voltage | 100 V |
Processing package description | LEAD FREE PACKAGE-3 |
Lead-free | Yes |
EU RoHS regulations | Yes |
state | ACTIVE |
packaging shape | RECTANGULAR |
Package Size | FLANGE MOUNT |
Terminal form | THROUGH-HOLE |
terminal coating | MATTE TIN OVER NICKEL |
Terminal location | SINGLE |
Packaging Materials | PLASTIC/EPOXY |
structure | SINGLE WITH BUILT-IN DIODE |
Number of components | 1 |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Channel type | N-CHANNEL |
field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | GENERAL PURPOSE POWER |
Maximum leakage current | 18 A |
Rated avalanche energy | 25 mJ |
Maximum drain on-resistance | 0.0725 ohm |
Maximum leakage current pulse | 57 A |