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IRFB4212PBF

Description
18 A, 100 V, 0.0725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size288KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFB4212PBF Overview

18 A, 100 V, 0.0725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRFB4212PBF Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
Processing package descriptionLEAD FREE PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN OVER NICKEL
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current18 A
Rated avalanche energy25 mJ
Maximum drain on-resistance0.0725 ohm
Maximum leakage current pulse57 A

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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