GS8672T19/37BE-450/400/375/333/300
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• On-Chip ECC with virtually zero SER
• 2.0 Clock Latency
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write Capability
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with 18Mb, 36Mb and 144Mb devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaDDR-II+
TM
Burst of 2 ECCRAM
TM
Clocking and Addressing Schemes
450 MHz–300 MHz
1.8 V V
DD
1.5 V I/O
The GS8672T19/37BE SigmaDDR-II+ ECCRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaDDR-II+ B2
ECCRAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaDDR-II+ B2 ECCRAM is always one address
pin less than the advertised index depth (e.g., the 4M x 18 has
an 2M addressable index).
SigmaDDR™ ECCRAM Overview
The GS8672T19/37BE ECCRAMs are built in compliance
with the SigmaDDR-II+ SRAM pinout standard for Common
I/O synchronous ECCRAMs. They are 75,497,472-bit (72Mb)
ECCRAMs. The GS8672T19/37BE SigmaCIO ECCRAMs are
just one element in a family of low power, low voltage HSTL
I/O ECCRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by Soft Error Rate (SER) events such as cosmic rays,
alpha particles etc. The resulting SER of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no On-Chip ECC,
which typically have an SER of 200 FITs/Mb or more. SER
quoted above is based on reading taken at sea level.
However, the On-Chip Error Correction (ECC) will be
disabled if a “Half Write” operation is initiated. See the
Byte
Write Contol
section for further information.
Parameter Synopsis
-450
tKHKH
tKHQV
2.2 ns
0.45 ns
-400
2.5 ns
0.45 ns
-375
2.66 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
Rev: 1.02a 8/2017
1/25
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8672T19/37BE-450/400/375/333/300
Pin Description Table
Symbol
SA
R/W
BW0–BW3
LD
K
K
TMS
TDI
TCK
TDO
V
REF
ZQ
MCL
DQ
Description
Synchronous Address Inputs
Synchronous Read/Write
Synchronous Byte Writes
Synchronous Load Pin
Input Clock
Input Clock
Test Mode Select
Test Data Input
Test Clock Input
Test Data Output
HSTL Input Reference Voltage
Output Impedance Matching Input
Must Connect Low
Data I/O
Disable DLL when low
Output Echo Clock
Output Echo Clock
Power Supply
Isolated Output Buffer Supply
Power Supply: Ground
Q Valid Output
No Connect
No Function
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
—
Input/Output
Input
Output
Output
Supply
Supply
Supply
Output
—
—
Comments
—
—
Active Low
x18/x36 only
Active Low
Active High
Active Low
—
—
—
—
—
—
—
Three State
Active Low
—
—
1.8 V Nominal
1.5 V Nominal
—
—
—
—
Doff
CQ
CQ
V
DD
V
DDQ
V
SS
QVLD
NC
NF
Notes:
1. NC = Not Connected to die or any other pin
2. NF = No Function. There is an electrical connection to this input pin, but the signal has no function in the device. It can be left unconnected,
or tied to V
SS
or V
DDQ.
3. K, or K cannot be set to V
REF
voltage.
Rev: 1.02a 8/2017
4/25
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8672T19/37BE-450/400/375/333/300
Background
Common I/O SRAMs, from a system architecture point of view, are attractive in read dominated or block transfer applications.
Therefore, the SigmaDDR-II+ ECCRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs
are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed
Common I/O SRAMs data bandwidth in half.
Burst Operations
Read and write operations are "burst" operations. In every case where a read or write command is accepted by the SRAM, it will
respond by issuing or accepting two beats of data, executing a data transfer on subsequent rising edges of K and K, as illustrated in
the timing diagrams. This means that it is possible to load new addresses every K clock cycle. Addresses can be loaded less often,
if intervening deselect cycles are inserted.
Deselect Cycles
Chip Deselect commands are pipelined to the same degree as read commands. This means that if a deselect command is applied to
the SRAM on the next cycle after a read command captured by the SRAM, the device will complete the two beat read data transfer
and then execute the deselect command, returning the output drivers to high-Z. A high on the LD pin prevents the RAM from
loading read or write command inputs and puts the RAM into deselect mode as soon as it completes all outstanding burst transfer
operations.
SigmaDDR-II+ B2 ECCRAM Read Cycles
The ECCRAM executes pipelined reads. The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The
read command (LD low and R/W high) is clocked into the ECCRAM by a rising edge of K.
SigmaDDR-II+ B2 ECCRAM Write Cycles
The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The ECCRAM executes "late write" data
transfers. Data in is due at the device inputs on the rising edge of K following the rising edge of K clock used to clock in the write
command (LD and R/W low) and the write address. To complete the remaining beat of the burst of two write transfer, the
ECCRAM captures data in on the next rising edge of K, for a total of two transfers per address load.
Rev: 1.02a 8/2017
5/25
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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