SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBS0130
Io = 100mA
V
R
= 30 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
0805(2012)
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
Mechanical data
Case: 0805(2012)Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band.
Mounting position: Any.
0.008(R0.20) Typ.
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Weight: 0.0048 gram. ( approximately)
Maximum Rating
( at T
A
= 25
C
unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
Io
I
FSM
P
D
T
STG
Tj
-40
-40
1000
250
+125
+125
35
30
100
V
V
mA
mA
mW
C
C
Electrical Characteristics
( at T
A
= 25
C
unless otherwise noted )
Parameter
Forward voltage
Reverse current
Capacitance between terminals
V
R
= 30 V
f = 1MHz, and 10 VDC reverse voltage
Conditions
I
F
= 100 mA DC
Symbol Min Typ Max Unit
V
F
I
R
C
T
10
0.44
30
V
uA
pF
RDS0208007-C
Page 1
SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (CDBS0130)
Fig. 1 - Forward characteristics
1000
1m
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
125 C
100u
100
75 C
10u
10
5C
12
C
1u
25 C
1
0
0.1
0.2
0.3
0.4
0.5
0.6
25 C
-25 C
75
100n
0
10
20
30
40
50
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (pF)
20
Fig. 4 - Current derating curve
f = 1 MHz
Ta = 25 C
Average forward current ( % )
Mounting on glass epoxy PCBs
100
80
10
60
40
20
1
0
5
10
15
0
20
25
30
35
0
25
50
75
100
125
150
Reverse voltage (V)
Ambient temperature (
C
)
RDS0208007-C
Page 2