JFET P-channel FET
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | NXP |
Parts packaging code | SOT-23 |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain-source on-resistance | 125 Ω |
FET technology | JUNCTION |
JEDEC-95 code | TO-236AB |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 0.3 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |