SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 49.1 V
5.0 V to 40 V
500 W
40 A
150 °C
Uni-directional, bi-directional
DO-214AC (SMBA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
500
See next table
40
- 55 to + 150
UNIT
W
A
A
°C
Revision: 24-Oct-12
Document Number: 88875
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
(V)
(1)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
800
800
500
200
100
50
10
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
54.3
48.5
44.6
41.7
38.8
36.8
34.7
32.5
29.4
27.5
25.1
23.3
21.6
20.5
19.2
18.1
17.1
15.4
14.1
12.9
11.9
11.0
10.3
9.4
8.6
7.8
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE MARKING
CODE
UNI
SMA5J5.0A
(5)
SMA5J6.0A
SMA5J6.5A
SMA5J7.0A
SMA5J7.5A
SMA5J8.0A
SMA5J8.5A
SMA5J9.0A
SMA5J10A
SMA5J11A
SMA5J12A
SMA5J13A
SMA5J14A
SMA5J15A
SMA5J16A
SMA5J17A
SMA5J18A
SMA5J20A
SMA5J22A
SMA5J24A
SMA5J26A
SMA5J28A
SMA5J30A
SMA5J33A
SMA5J36A
SMA5J40A
5AE
5AG
5AK
5AM
5AP
5AR
5AT
5AV
5AX
5AZ
5BE
5BG
5BK
5BM
5BP
5BR
5BT
5BV
5BX
5BZ
5CE
5CG
5CK
5CM
5CP
5CR
BI
5AE
5AG
5AK
5AM
5AP
5AR
5AT
5AV
5AX
5AZ
5BE
5BG
5BK
5BM
5BP
5BR
5BT
5BV
5BX
5BZ
5CE
5CG
5CK
5CM
5CP
5CR
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4)
All terms and symbols are consistent with ANSI/IEEE C62.35
(5)
For the bi-directional SMA5J5.0CA, the maximum V
BR
is 7.25 V
(6)
V = 3.5 V at I = 25 A (uni-directional only)
F
F
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
R
JL
VALUE
80
25
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMA5J5.0A-E3/61
SMA5J5.0A-E3/5A
SMA5J5.0AHE3/61
(1)
SMA5J5.0AHE3/5A
(1)
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
61
5A
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Document Number: 88875
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Revision: 24-Oct-12
SMA5J5.0A thru SMA5J40CA
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Uni-Directional
Bi-Directional
Measured at
Zero Bias
1000
T
J
= 25 °C
f = 1.0 MHz
P
PPM
- Peak Pulse Power (kW)
1
C
J
- Junction Capacitance (pF)
100
Measured at Stand-Off
Voltage V
WM
10
1
10
100
200
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 -
Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
Transient Thermal Impedance (°C/W)
50
10
25
0
0
25
50
75
100
125
150
175
200
1
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t
p
- Pulse Duration (s)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 -
Typical Transient Thermal Impedance
150
I
PPM
- Peak Pulse Current, % I
RSM
100
Peak Value
I
PPM
Peak Forward Surge Current (A)
t
r
= 10 µs
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
200
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs
Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
50
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Fig. 3 -
Pulse Waveform
Fig. 6 -
Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Use Only
Revision: 24-Oct-12
Document Number: 88875
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMA5J5.0A thru SMA5J40CA
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Vishay General Semiconductor
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 24-Oct-12
Document Number: 88875
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000