PDMB75B12 datasheet, PDF - EEWORLD Datasheet

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PDMB75B12: DescriptionIGBT MODULE Dual 75A 1200V; File Size116KB，3 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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PDMB75B12 Overview

IGBT MODULE Dual 75A 1200V

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IGBT

MODULE

CIRCUIT

Dual 75A 1200V

PDMB75B12

OUTLINE DRAWING

4- fasten- tab No 110

Dimension(mm)

Approximate Weight : 320g

MAXMUM RATINGS

(Tc=25°C)

Item

Collector-Emitter Voltage

Gate - Emitter Voltage

Collector Current

1 ms

Symbol

CES

GES

stg

ISO

TOR

PDMB75B12

1200

+/ - 20

150

400

-40 to +150

-40 to +125

2500

Unit

°C

N•m

Collector Power Dissipation

Junction Temperature Range

Storage Temperature Range

Isolation Voltage Terminal to Base AC, 1 min.)

Module Base to Heatsink

Mounting Torque

Bus Bar to Main Terminals

ELECTRICAL CHARACTERISTICS

(Tc=25°C)

Characteristic

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

Rise Time

Turn-on Time

Switching Time

Fall Time

Turn-off Time

Symbol

CES

GES

CE(sat)

GE(th)

Cies

off

Test Condition

=1200V,V

=0V

=+/- 20V,V

=0V

=75A,V

=15V

=5V,I

=75mA

=10V,V

=0V,f=1MHz

= 600V

= 8 ohm

= 13 ohm

= +/- 15V

Min.

4.0

Typ.

1.9

6300

0.25

0.40

0.25

0.80

Max.

2.0

1.0

2.4

8.0

0.45

0.70

0.35

1.00

Unit

µA

µs

FREE WHEELING DIODES RATINGS & CHARACTERISTICS

(Tc=25°C)

Item

Symbol

Rated Value

Forward Current

1 ms

150

Unit

Typ.

1.9

0.2

Characteristic

Peak Forward Voltage

Reverse Recovery Time

Symbol

Test Condition

=75A,V

=0V

=75A,V

=-10V,di/dt=150A/

µs

Min.

Max.

2.4

0.3

Unit

µs

Unit

°C/W

THERMAL CHARACTERISTICS

Characteristic

Thermal Impedance

IGBT

DIODE

Symbol

th(j-c)

Test Condition

Junction to Case

Min.

Typ.

Max.

0.3

0.6

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