Parameter Name | Attribute value |
Maker | Vishay |
package instruction | SMALL OUTLINE, S-PDSO-C5 |
Contacts | 8 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 18 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (Abs) (ID) | 3.4 A |
Maximum drain current (ID) | 3.4 A |
Maximum drain-source on-resistance | 0.062 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | S-PDSO-C5 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 5 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | SQUARE |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 3.8 W |
Maximum pulsed drain current (IDM) | 20 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | C BEND |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |