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SI7810DN-T1-GE3

Description
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
CategoryDiscrete semiconductor    The transistor   
File Size71KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI7810DN-T1-GE3 Overview

MOSFET 100V Vds 20V Vgs PowerPAK 1212-8

SI7810DN-T1-GE3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionSMALL OUTLINE, S-PDSO-C5
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)18 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)3.4 A
Maximum drain current (ID)3.4 A
Maximum drain-source on-resistance0.062 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-C5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.8 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

SI7810DN-T1-GE3 Related Products

SI7810DN-T1-GE3 PCF0603-02-158KBA1
Description MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 Fixed Resistor, Thin Film, 0.063W, 158000ohm, 50V, 0.1% +/-Tol, 50ppm/Cel, Surface Mount, 0603, CHIP
package instruction SMALL OUTLINE, S-PDSO-C5 CHIP
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Number of terminals 5 2
Maximum operating temperature 150 °C 125 °C
Package form SMALL OUTLINE SMT
surface mount YES YES

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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