Single-Channel, 128-/64-/32-Position, Up/Down,
±
8%
Resistor Tolerance, Nonvolatile Digital Potentiometer
Data Sheet
FEATURES
Nominal resistor tolerance error: ±8% maximum
Wiper current: ±6 mA
Rheostat mode temperature coefficient: 35 ppm/°C
Low power consumption: 2.5 µA max @ 2.7 V and 125°C
Wide bandwidth: 4 MHz (5 kΩ option)
Power-on EEPROM refresh time < 50 μs
50-year typical data retention at 125°C
1 million write cycles
2.3 V to 5.5 V supply operation
Chip select enable multiple device operation
Wide operating temperature: −40°C to +125°C
Thin, 2 mm × 2 mm × 0.55 mm 8-lead LFCSP package
AD5111/AD5113/AD5115
FUNCTIONAL BLOCK DIAGRAM
V
DD
POWER-ON
RESET
AD5111/
AD5113/
AD5115
DATA
A
W
CLK
EN
CS
U/D
UP/DOWN
CONTROL
LOGIC
EEPROM
B
DATA
RDAC
REGISTER
09654-001
GND
Figure 1.
APPLICATIONS
Mechanical potentiometer replacement
Portable electronics level adjustment
Audio volume control
Low resolution DAC
LCD panel brightness and contrast control
Programmable voltage to current conversion
Programmable filters, delays, time constants
Feedback resistor programmable power supply
Sensor calibration
Table 1. ±8% Resistance Tolerance Family
Model
AD5110
AD5111
AD5112
AD5113
AD5116
AD5114
AD5115
Resistance (kΩ)
10, 80
10, 80
5, 10, 80
5, 10, 80
5, 10, 80
10, 80
10, 80
Position
128
128
64
64
64
32
32
Interface
I
2
C
Up/down
I
2
C
Up/down
Push-button
I
2
C
Up/down
GENERAL DESCRIPTION
The
AD5111/AD5113/AD5115
provide a nonvolatile solution
for 128-/64-/32-position adjustment applications, offering
guaranteed low resistor tolerance errors of ±8% and up to
±6 mA current density in the A, B, and W pins. The low resistor
tolerance, low nominal temperature coefficient, and high
bandwidth simplify open-loop applications, as well as tolerance
matching applications.
The new low wiper resistance feature minimizes the wiper
resistance in the extremes of the resistor array to only 45 Ω,
typical.
A simple 3-wire up/down interface allows manual switching
or high speed digital control with clock rates up to 50 MHz.
The
AD5111/AD5113/AD5115
are available in a 2 mm × 2 mm
LFCSP package. The parts are guaranteed to operate over the
extended industrial temperature range of −40°C to +125°C.
Rev. B
Document Feedback
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2011–2012 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
AD5111/AD5113/AD5115
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics—AD5111 .......................................... 3
Electrical Characteristics—AD5113 .......................................... 5
Electrical Characteristics—AD5115 .......................................... 7
Interface Timing Specifications .................................................. 9
Timing Diagram ........................................................................... 9
Absolute Maximum Ratings .......................................................... 10
Thermal Resistance .................................................................... 10
ESD Caution ................................................................................ 10
Pin Configuration and Function Descriptions ........................... 11
Typical Performance Characteristics ........................................... 12
Data Sheet
Test Circuits..................................................................................... 17
Theory of Operation ...................................................................... 18
RDAC Register and EEPROM .................................................. 18
Basic Operation .......................................................................... 18
Low Wiper Resistance Feature ................................................. 18
Shutdown Mode ......................................................................... 18
EEPROM Write Operation ....................................................... 18
RDAC Architecture .................................................................... 19
Programming the Variable Resistor ......................................... 19
Programming the Potentiometer Divider ............................... 20
Terminal Voltage Operating Range ......................................... 20
Power-Up Sequence ................................................................... 21
Layout and Power Supply Biasing ............................................ 21
Outline Dimensions ....................................................................... 22
Ordering Guide .......................................................................... 22
REVISION HISTORY
11/12—Rev. A to Rev. B
Changed Low Power Consumption from 2.5 mA to 2.5 µA....... 1
Changed
I
DD
Unit from mA to µA, Table 2 .................................... 3
Changed
I
DD
Unit from mA to µA, Table 3 .................................... 5
Changed
I
DD
Unit from mA to µA, Table 4 .................................... 7
4/12—Rev. 0 to Rev. A
Changes to Features Section............................................................ 1
Changes to Positive Supply Current, Table 2 ................................ 3
Changes to Positive Supply Current, Table 3 ................................ 5
Changes to Positive Supply Current, Table 4 ................................ 7
Updated Outline Dimensions ....................................................... 22
10/11—Revision 0: Initial Version
Rev. B | Page 2 of 24
Data Sheet
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—AD5111
AD5111/AD5113/AD5115
10 kΩ and 80 kΩ versions: V
DD
= 2.3 V to 5.5 V, V
A
= V
DD
, V
B
= 0 V, −40°C < T
A
< +125°C, unless otherwise noted.
Table 2.
Parameter
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution
Resistor Integral Nonlinearity
2
Symbol
N
R-INL
Test Conditions/Comments
Min
7
−2.5
−1
−0.5
−1
−8
Typ
1
Max
Unit
Bits
LSB
LSB
LSB
LSB
%
ppm/°C
Ω
Ω
Ω
R
AB
= 10 kΩ, V
DD
= 2.3 V to 2.7 V
R
AB
= 10 kΩ, V
DD
= 2.7 V to 5.5 V
R
AB
= 80 kΩ
Resistor Differential Nonlinearity
2
Nominal Resistor Tolerance
Resistance Temperature Coefficient
3
Wiper Resistance
R-DNL
ΔR
AB
/R
AB
(ΔR
AB
/R
AB
)/ΔT × 10
6
R
W
R
BS
R
TS
±0.5
±0.25
±0.1
±0.25
35
70
45
70
+2.5
+1
+0.5
+1
+8
140
80
140
Code = zero scale
Code = bottom scale
Code = top scale
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Integral Nonlinearity
4
Differential Nonlinearity
4
Full-Scale Error
Zero-Scale Error
Voltage Divider Temperature Coefficient
3
RESISTOR TERMINALS
Maximum Continuous I
A
, I
B
, and I
W
Current
3
Terminal Voltage Range
5
Capacitance A, Capacitance B
3
, 6
Capacitance W
3
, 6
Common-Mode Leakage Current
3
DIGITAL INPUTS
Input Logic
3
High
Low
Input Current
3
Input Capacitance
3
POWER SUPPLIES
Single-Supply Power Range
Positive Supply Current
INL
DNL
V
WFSE
V
WZSE
(ΔV
W
/V
W
)/ΔT × 10
6
R
AB
= 10 kΩ
R
AB
= 80 kΩ
R
AB
= 10 kΩ
R
AB
= 80 kΩ
Code = half scale
R
AB
= 10 kΩ
R
AB
= 80 kΩ
−0.5
−0.5
−2.5
−1.5
±0.15
±0.15
+0.5
+0.5
1.5
0.5
±10
−6
−1.5
GND
20
35
−500
±15
+500
+6
+1.5
V
DD
LSB
LSB
LSB
LSB
LSB
LSB
ppm/°C
mA
mA
V
pF
pF
nA
C
A
, C
B
C
W
f = 1 MHz, measured to GND,
code = half scale
f = 1 MHz, measured to GND,
code = half scale
V
A
= V
W
= V
B
V
INH
V
INL
I
N
C
IN
2
0.8
±1
5
2.3
5.5
3.5
2.5
2.4
V
V
µA
pF
V
µA
µA
µA
mA
µA
µW
dB
dB
I
DD
V
IH
= V
DD
or V
IL
= GND, V
DD
= 5 V
V
IH
= V
DD
or V
IL
= GND, V
DD
= 2.7 V
V
IH
= V
DD
or V
IL
= GND, V
DD
= 2.3 V
0.75
EEMEM Store Current
3
, 7
EEMEM Read Current
3
, 8
Power Dissipation
9
Power Supply Rejection
3
I
DD_NVM_STORE
I
DD_NVM_READ
P
DISS
PSR
V
IH
= V
DD
or V
IL
= GND
∆V
DD
/∆V
SS
= 5 V ± 10%
R
AB
= 10 kΩ
R
AB
= 80 kΩ
2
320
5
−50
−64
Rev. B | Page 3 of 24
AD5111/AD5113/AD5115
Parameter
DYNAMIC CHARACTERISTICS
3
, 10
Bandwidth
Symbol
BW
Test Conditions/Comments
Code = half scale, −3 dB
R
AB
= 10 kΩ
R
AB
= 80 kΩ
V
A
= V
DD
/2 + 1 V rms, V
B
= V
DD
/ 2, f
= 1 kHz, code = half scale
R
AB
= 10 kΩ
R
AB
= 80 kΩ
V
A
= 5 V, V
B
= 0 V, ±0.5 LSB
error band
R
AB
= 10 kΩ
R
AB
= 80 kΩ
Code = half scale, T
A
= 25°C,
f = 100 kHz
R
AB
= 10 kΩ
R
AB
= 80 kΩ
T
A
= 25°C
100
Data Retention
1
2
Data Sheet
Min
Typ
1
Max
Unit
2
200
MHz
kHz
Total Harmonic Distortion
THD
−80
−85
dB
dB
V
W
Settling Time
t
s
3
12
µs
µs
Resistor Noise Density
e
N_WB
9
20
1
50
nV/√Hz
nV/√Hz
MCycles
kCycles
Years
FLASH/EE MEMORY RELIABILITY
3
Endurance
11
12
Typical values represent average readings at 25°C, V
DD
= 5 V, V
SS
= 0 V, and V
LOGIC
= 5 V.
R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step
change from ideal between successive tap positions. The maximum wiper current is limited to 0.8 × V
DD
/R
AB
.
3
Guaranteed by design and characterization; not subject to production test.
4
INL and DNL are measured at V
WB
with the RDAC configured as a potentiometer divider similar to a voltage output DAC. V
A
= V
DD
and V
B
= 0 V. DNL specification limits
of ±1 LSB maximum are guaranteed monotonic operating conditions.
5
Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on current direction with respect to each other.
6
C
A
is measured with V
W
= V
A
= 2.5 V, C
B
is measured with V
W
= V
B
= 2.5 V, and C
W
is measured with V
A
= V
B
= 2.5 V.
7
Different from operating current; supply current for NVM program lasts approximately 30 ms.
8
Different from operating current; supply current for NVM read lasts approximately 20 µs.
9
P
DISS
is calculated from (I
DD
× V
DD
).
10
All dynamic characteristics use V
DD
= 5.5 V and V
LOGIC
= 5 V.
11
Endurance is qualified at 100,000 cycles per JEDEC Standard 22, Method A117 and measured at 150°C.
12
Retention lifetime equivalent at junction temperature (T
J
) is 125°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.
Rev. B | Page 4 of 24
Data Sheet
ELECTRICAL CHARACTERISTICS—AD5113
AD5111/AD5113/AD5115
5 kΩ, 10 kΩ, and 80 kΩ versions: V
DD
= 2.3 V to 5.5 V, V
A
= V
DD
, V
B
= 0 V, −40°C < T
A
< +125°C, unless otherwise noted.
Table 3.
Parameter
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution
Resistor Integral Nonlinearity
2
Symbol
N
R-INL
Test Conditions/Comments
Min
6
−2.5
−1
−1
−0.25
−1
−8
Typ
1
Max
Unit
Bits
LSB
LSB
LSB
LSB
LSB
%
ppm/°C
Ω
Ω
Ω
R
AB
= 5 kΩ, V
DD
= 2.3 V to 2.7 V
R
AB
= 5 kΩ, V
DD
= 2.7 V to 5.5 V
R
AB
= 10 kΩ
R
AB
= 80 kΩ
Resistor Differential Nonlinearity
2
Nominal Resistor Tolerance
Resistance Temperature Coefficient
3
Wiper Resistance
R-DNL
ΔR
AB
/R
AB
(ΔR
AB
/R
AB
)/ΔT × 10
6
R
W
R
BS
R
TS
±0.5
±0.25
±0.25
±0.1
±0.25
35
70
45
70
+2.5
+1
+1
+0.25
+1
+8
140
80
140
Code = zero scale
Code = bottom scale
Code = top scale
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Integral Nonlinearity
4
Differential Nonlinearity
4
Full-Scale Error
INL
DNL
V
WFSE
Zero-Scale Error
V
WZSE
Voltage Divider Temperature Coefficient
3
RESISTOR TERMINALS
Maximum Continuous I
A
, I
B
, and I
W
Current
3
Terminal Voltage Range
5
Capacitance A, Capacitance B
3
, 6
Capacitance W
3
, 6
Common-Mode Leakage Current
3
DIGITAL INPUTS
Input Logic
3
High
Low
Input Current
3
Input Capacitance
3
POWER SUPPLIES
Single-Supply Power Range
Positive Supply Current
(ΔV
W
/V
W
)/ΔT × 10
6
R
AB
= 5 kΩ
R
AB
=10 kΩ
R
AB
= 80 kΩ
R
AB
= 5 kΩ
R
AB
=10 kΩ
R
AB
= 80 kΩ
Code = half scale
R
AB
= 5 kΩ, 10 kΩ
R
AB
= 80 kΩ
−0.5
−0.5
−2.5
−1.5
−1
±0.15
±0.15
+0.5
+0.5
1.5
1
0.25
±10
−6
−1.5
GND
20
35
−500
±15
+500
+6
+1.5
V
DD
LSB
LSB
LSB
LSB
LSB
LSB
LSB
LSB
ppm/°C
mA
mA
V
pF
pF
nA
C
A
, C
B
C
W
f = 1 MHz, measured to GND,
code = half scale
f = 1 MHz, measured to GND,
code = half scale
V
A
= V
W
= V
B
V
INH
V
INL
I
N
C
IN
2
0.8
±1
5
2.3
5.5
3.5
2.5
2.4
V
V
µA
pF
V
µA
µA
µA
mA
µA
µW
dB
dB
dB
I
DD
V
IH
= V
DD
or V
IL
= GND, V
DD
= 5 V
V
IH
= V
DD
or V
IL
= GND, V
DD
= 2.7 V
V
IH
= V
DD
or V
IL
= GND, V
DD
= 2.3 V
0.75
EEMEM Store Current
3
, 7
EEMEM Read Current
3
, 8
Power Dissipation
9
Power Supply Rejection
3
I
DD_NVM_STORE
I
DD_NVM_READ
P
DISS
PSR
V
IH
= V
DD
or V
IL
= GND
∆V
DD
/∆V
SS
= 5 V ± 10%
R
AB
= 5 kΩ
R
AB
=10 kΩ
R
AB
= 80 kΩ
2
320
5
−43
−50
−64
Rev. B | Page 5 of 24
京公网安备 11010802033920号
EEWORLD
