MOSFET -60V -12A
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | ON Semiconductor |
| Parts packaging code | TO-220AB |
| package instruction | PLASTIC, CASE 221A-09, TO-220, 3 PIN |
| Contacts | 3 |
| Manufacturer packaging code | CASE 221A-09 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 1 week |
| Avalanche Energy Efficiency Rating (Eas) | 216 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 12 A |
| Maximum drain current (ID) | 2.4 A |
| Maximum drain-source on-resistance | 0.196 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 62.5 W |
| Maximum pulsed drain current (IDM) | 42 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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