MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1517/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
•
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
•
Characterized with Series Equivalent Large–Signal
Impedance Parameters
•
Excellent Thermal Stability
•
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
•
Broadband UHF/VHF Demonstration Amplifier
G
Information Available Upon Request
•
RF Power Plastic Surface Mount Package
•
Available in Tape and Reel.
S
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1517T1
520 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage (1)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (2)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
25
±20
4
62.5
0.50
–65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
(2) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
2
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF1517T1
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 35 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 7.5 Vdc, I
D
= 120
µAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
G
ps
η
10
50
11
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
66
38
6
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
g
fs
1.0
—
0.9
1.7
0.5
—
2.1
—
—
Vdc
Vdc
S
I
DSS
I
GSS
—
—
—
—
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF1517T1
2
MOTOROLA RF DEVICE DATA
V
GG
C9
C8
B2
+
C7
R3
B1
R2
C18
L1
Z6
DUT
C10
C11
C12
C13
Z7
Z8
Z9
Z10
C14
N2
C17
C16
+
C15
V
DD
R1
N1
C1
C2
C3
C4
C5
C6
RF
INPUT
Z1
Z2
Z3
Z4
Z5
RF
OUTPUT
B1, B2
C1
C2, C3, C4, C10,
C12, C13
C5, C11
C6, C18
C7, C15
C8, C16
C9, C17
C14
L1
N1, N2
Short Ferrite Bead, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
43 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10
µF,
50 V Electrolytic Capacitor
0.1
µF,
100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
15
Ω,
0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.315″ x 0.080″ Microstrip
1.415″ x 0.080″ Microstrip
0.322″ x 0.080″ Microstrip
0.022″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.589″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 1. 480 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 480 – 520 MHz
10
Pout , OUTPUT POWER (WATTS)
8
6
4
2
V
DD
= 7.5 Vdc
0
0
0.2
0.4
0.6
P
in
, INPUT POWER (WATTS)
0.8
1.0
-25
1
2
3
500 MHz
480 MHz
0
520 MHz
IRL, INPUT RETURN LOSS (dB)
-5
-10
-15
-20
V
DD
= 7.5 Vdc
4
5
6
7
8
P
out
, OUTPUT POWER (WATTS)
9
10
520 MHz
500 MHz
480 MHz
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus
Output Power
MOTOROLA RF DEVICE DATA
MRF1517T1
3
TYPICAL CHARACTERISTICS, 480 – 520 MHz
18
16
14
GAIN (dB)
12
10
8
6
V
DD
= 7.5 Vdc
1
2
3
5
6
7
8
P
out
, OUTPUT POWER (WATTS)
4
9
10
520 MHz
Eff, DRAIN EFFICIENCY (%)
500 MHz
80
480 MHz
70
60
50
40
30
20
10
1
2
3
5
6
7
8
4
P
out
, OUTPUT POWER (WATTS)
V
DD
= 7.5 Vdc
9
10
11
520 MHz
500 MHz
480 MHz
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
10
8
6
4
2
0
P
in
= 27 dBm
V
DD
= 7.5 Vdc
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
500 MHz
520 MHz
480 MHz
80
70
60
50
40
30
480 MHz
500 MHz
520 MHz
Eff, DRAIN EFFICIENCY (%)
P
in
= 27 dBm
V
DD
= 7.5 Vdc
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
12
Pout , OUTPUT POWER (WATTS)
10
8
6
4
2
0
P
in
= 27 dBm
I
DQ
= 150 mA
5
6
7
8
9
10
500 MHz
520 MHz
480 MHz
Eff, DRAIN EFFICIENCY (%)
80
70
500 MHz
60
50
40
30
520 MHz
480 MHz
P
in
= 27 dBm
I
DQ
= 150 mA
5
6
7
8
9
10
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517T1
4
MOTOROLA RF DEVICE DATA
V
GG
C8
C7
B2
+
C6
R3
B1
R2
C17
L1
Z5
Z4
DUT
C10
C9
C11
C12
Z6
Z7
Z8
Z9
C13
N2
C16
C15
+
C14
V
DD
R1
N1
C1
C2
C3
C4
C5
RF
INPUT
Z1
Z2
Z3
RF
OUTPUT
B1, B2
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
L1
N1, N2
Short Ferrite Bead, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
130 pF, 100 mil Chip Capacitor
10
µF,
50 V Electrolytic Capacitor
0.1
µF,
100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
12
Ω,
0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.617″ x 0.080″ Microstrip
0.723″ x 0.080″ Microstrip
0.513″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.048″ x 0.080″ Microstrip
0.577″ x 0.080″ Microstrip
1.135″ x 0.080″ Microstrip
0.076″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 10. 400 – 440 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 – 440 MHz
10
9
Pout , OUTPUT POWER (WATTS)
7
6
5
4
3
2
1
0
0
0.1
V
DD
= 7.5 Vdc
0.2
0.3
P
in
, INPUT POWER (WATTS)
0.4
0.5
420 MHz
440 MHz
IRL, INPUT RETURN LOSS (dB)
8
400 MHz
-5
-10
-15
-20
-25
V
DD
= 7.5 Vdc
1
2
3
6
7
4
5
P
out
, OUTPUT POWER (WATTS)
8
9
10
400 MHz
420 MHz
440 MHz
0
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MOTOROLA RF DEVICE DATA
MRF1517T1
5
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