d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS415DNT
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= -4 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -4.5 V, R
g
= 1
f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -20 A
V
GS
= -4.5 V, I
D
= -15 A
V
GS
= -2.5 V, I
D
= -10 A
V
DS
= -10 V, I
D
= -20 A
MIN.
-20
-
-
-0.4
-
-
-
-30
-
-
-
-
-
-
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-14
3.1
-
-
-
-
-
0.0033
0.0044
0.0076
70
5460
645
642
117
55.5
7.9
12.7
2.2
37
38
82
25
14
13
83
14
-
-
-0.72
25
12
11
14
MAX.
-
-
-
-1.5
± 100
-1
-10
-
0.0040
0.0055
0.0095
-
-
-
-
180
85
-
-
4
70
70
150
50
25
25
150
25
-35
-80
-1.1
50
24
-
-
ns
nC
pF
S
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state
resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS415DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 3 V
64
I
D
- Drain Current (A)
Vishay Siliconix
80
64
I
D
- Drain Current (A)
48
48
32
V
GS
= 2 V
16
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
32
T
C
= 25
°C
16
T
C
= 125
°C
0
0.0
0.8
1.6
T
C
= -55 °C
2.4
3.2
4.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.0200
8000
0.0160
6400
C - Capacitance (pF)
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0120
V
GS
= 2.5 V
0.0080
V
GS
= 4.5 V
0.0040
V
GS
= 10 V
0.0000
0
16
32
48
64
80
I
D
- Drain Current (A)
4800
3200
C
oss
1600
C
rss
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 15 V
1.6
I
D
= 20 A
1.4
V
GS
= 10 V
1.2
V
GS
= 2.5 V
1.0
2
0.8
0
0
25
50
75
100
125
Q
g
- Total
Gate
Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS415DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.020
Vishay Siliconix
10
I
S
-
Source
Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.016
I
D
= 20 A
0.012
0.1
0.008
T
J
= 125
°C
0.01
0.004
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-0.4
100
80
-0.6
I
D
= 250 μA
Power (W)
60
V
GS(th)
(V)
-0.8
I
D
= 1 mA
-1.0
40
20
-1.2
-50
-25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
limited
100 μs
10 I
D
limited
I
D
- Drain Current (A)
1 ms
10 ms
1
Limited by R
DS(on)
(1)
100 ms
1
s
0.1
T
A
= 25
°C
Single
pulse
0.01
0.01
(1)
10
s
DC
BVDSS limited
1
10
100
0.1
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS415DNT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
80
I
D
- Drain Current (A)
60
40
Limited by package
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
65
2.0
52
1.6
26
Power (W)
0
25
50
75
100
125
150
Power (W)
39
1.2
0.8
13
0.4
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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