Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Cree |
Product Category | Discrete Semiconductor Modules |
RoHS | Details |
Product | Power Semiconductor Modules |
Type | H-Bridge MOSFET Module |
Vf - Forward Voltage | - |
Vr - Reverse Voltage | - |
Mounting Style | Screw |
Package / Case | Module |
Maximum Operating Temperature | - |
Packaging | Bulk |
Configuration | Half-Bridge |
Height | 30 mm |
Length | 106.4 mm |
Output Current | - |
Width | 61.4 mm |
Gate Trigger Current - Igt | - |
Holding Current Ih Max | - |
Typical Delay Time | - |
Id - Continuous Drain Current | 193 A |
If - Forward Current | - |
Ifsm - Forward Surge Current | - |
Operating Supply Voltage | - |
Rds On - Drain-Source Resistance | 13 mOhms |
Factory Pack Quantity | 1 |
Vds - Drain-Source Breakdown Voltage | 1.2 kV |