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CAS120M12BM2

Description
Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module
Categorysemiconductor    Discrete semiconductor   
File Size821KB,9 Pages
ManufacturerCree
Websitehttp://www.cree.com/
Environmental Compliance
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CAS120M12BM2 Overview

Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module

CAS120M12BM2 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCree
Product CategoryDiscrete Semiconductor Modules
RoHSDetails
ProductPower Semiconductor Modules
TypeH-Bridge MOSFET Module
Vf - Forward Voltage-
Vr - Reverse Voltage-
Mounting StyleScrew
Package / CaseModule
Maximum Operating Temperature-
PackagingBulk
ConfigurationHalf-Bridge
Height30 mm
Length106.4 mm
Output Current-
Width61.4 mm
Gate Trigger Current - Igt-
Holding Current Ih Max-
Typical Delay Time-
Id - Continuous Drain Current193 A
If - Forward Current-
Ifsm - Forward Surge Current-
Operating Supply Voltage-
Rds On - Drain-Source Resistance13 mOhms
Factory Pack Quantity1
Vds - Drain-Source Breakdown Voltage1.2 kV

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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