MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II Mos
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | STMicroelectronics |
Parts packaging code | TO-251 |
package instruction | ROHS COMPLIANT, IPAK-3 |
Contacts | 3 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 140 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (Abs) (ID) | 5 A |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.79 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-251 |
JESD-30 code | R-PSIP-T3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 45 W |
Maximum pulsed drain current (IDM) | 20 A |
surface mount | NO |
Terminal surface | Matte Tin (Sn) - annealed |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |