MOSFET NFET T0220FP 600V 4A 1.8R
| Parameter Name | Attribute value |
| Brand Name | ON Semiconductor |
| Is it lead-free? | Lead free |
| Maker | ON Semiconductor |
| Parts packaging code | TO-220AB |
| package instruction | HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3 |
| Contacts | 3 |
| Manufacturer packaging code | 221AH |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 1 week |
| Samacsys Description | MOSFET N-Ch 600V 4.8A 2.0 Ohm TO220FP ON Semiconductor NDF04N60ZG N-channel MOSFET Transistor, 4.8 A, 600 V, 3-Pin TO-220FP |
| Avalanche Energy Efficiency Rating (Eas) | 120 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (Abs) (ID) | 4.8 A |
| Maximum drain current (ID) | 3 A |
| Maximum drain-source on-resistance | 2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W |
| Maximum pulsed drain current (IDM) | 20 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| NDF04N60ZG | NDD04N60Z-1G | NDD04N60ZT4G | |
|---|---|---|---|
| Description | MOSFET NFET T0220FP 600V 4A 1.8R | MOSFET NFET IPAK 600V 4A 1.8R | MOSFET NFET DPAK 600V 4A 1.8R |
| Brand Name | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Is it lead-free? | Lead free | Lead free | Lead free |
| Maker | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| package instruction | HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3 | HALOGEN FREE AND ROHS COMPLIANT, CASE 369D-01, IPAK-3 | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3 |
| Contacts | 3 | 4 | 4 |
| Manufacturer packaging code | 221AH | 369 | 369AA |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 120 mJ | 120 mJ | 120 mJ |
| Shell connection | ISOLATED | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V | 600 V | 600 V |
| Maximum drain current (Abs) (ID) | 4.8 A | 4.1 A | 4.1 A |
| Maximum drain current (ID) | 3 A | 2.6 A | 2.6 A |
| Maximum drain-source on-resistance | 2 Ω | 2 Ω | 2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 | e3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W | 83 W | 83 W |
| Maximum pulsed drain current (IDM) | 20 A | 20 A | 20 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON |
| Factory Lead Time | 1 week | 1 week | - |
| Samacsys Description | MOSFET N-Ch 600V 4.8A 2.0 Ohm TO220FP ON Semiconductor NDF04N60ZG N-channel MOSFET Transistor, 4.8 A, 600 V, 3-Pin TO-220FP | - | NULL |
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