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APTC60DHM24T3G

Description
Discrete Semiconductor Modules Power Module - Coolmos
CategoryDiscrete semiconductor    The transistor   
File Size558KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APTC60DHM24T3G Overview

Discrete Semiconductor Modules Power Module - Coolmos

APTC60DHM24T3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XUFM-X16
Contacts25
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)1900 mJ
Shell connectionISOLATED
ConfigurationCOMPLEX
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)95 A
Maximum drain current (ID)95 A
Maximum drain-source on-resistance0.024 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X16
Number of components2
Number of terminals16
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)462 W
Maximum pulsed drain current (IDM)260 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APTC60DHM24T3G
Asymmetrical Bridge
Super Junction MOSFET
Power Module
13
14
Q1
CR3
18
V
DSS
= 600V
R
DSon
= 24m max @ Tj = 25°C
I
D
= 95A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
22
19
7
23
8
Q4
CR2
4
3
29
15
R1
30
31
32
16
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
29
30
23 22
20 19 18
16
15
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
31
32
2
3
4
7
8
10 11 12
14
13
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23…
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
V
m
W
A
mJ
October, 2012
1-8
APTC60DHM24T3G – Rev 2
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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