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AS4C8M32S-6TINTR

Description
Synchronous DRAM,
Categorystorage    storage   
File Size2MB,54 Pages
ManufacturerAlliance Memory
Environmental Compliance
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AS4C8M32S-6TINTR Overview

Synchronous DRAM,

AS4C8M32S-6TINTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8367295425
Reach Compliance Codecompliant
Country Of OriginTaiwan
ECCN codeEAR99
Factory Lead Time20 weeks
Samacsys ManufacturerAlliance Memory
Samacsys Modified On2020-12-09 06:55:45
YTEOL4
access modeFOUR BANK PAGE BURST
Maximum access time5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
length22.22 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals86
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.07 A
Minimum standby current3 V
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width10.16 mm
AS4C8M32S-6TIN
AS4C8M32S-7TCN
Revision History
AS4C8M32S -
86-pin TSOPII
PACKAGE
Revision
Rev 1.0
Details
Preliminary datasheet
Date
Mar.
2016

AS4C8M32S-6TINTR Related Products

AS4C8M32S-6TINTR AS4C8M32S-7TCNTR
Description Synchronous DRAM, Synchronous DRAM,
Is it Rohs certified? conform to conform to
Objectid 8367295425 8367295426
Reach Compliance Code compliant compliant
Country Of Origin Taiwan Taiwan
ECCN code EAR99 EAR99
Factory Lead Time 20 weeks 20 weeks
Samacsys Manufacturer Alliance Memory Alliance Memory
Samacsys Modified On 2020-12-09 06:55:45 2020-12-09 06:55:45
YTEOL 4 4
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 166 MHz 143 MHz
I/O type COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G86 R-PDSO-G86
length 22.22 mm 22.22 mm
memory density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32
Humidity sensitivity level 3 3
Number of functions 1 1
Number of ports 1 1
Number of terminals 86 86
word count 8388608 words 8388608 words
character code 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C
organize 8MX32 8MX32
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2
Encapsulate equivalent code TSSOP86,.46,20 TSSOP86,.46,20
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
refresh cycle 4096 4096
Maximum seat height 1.2 mm 1.2 mm
self refresh YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.07 A 0.07 A
Minimum standby current 3 V 3 V
Maximum slew rate 0.1 mA 0.1 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL
Terminal form GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm
Terminal location DUAL DUAL
width 10.16 mm 10.16 mm

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