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SI3454ADV-T1

Description
MOSFET 30V 4.5A
CategoryDiscrete semiconductor    The transistor   
File Size84KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI3454ADV-T1 Overview

MOSFET 30V 4.5A

SI3454ADV-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)3.4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si3454ADV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.060 at V
GS
= 10 V
0.085 at V
GS
= 4.5 V
I
D
(A)
4.5
3.8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
1
6
(1, 2, 5, 6) D
3 mm
2
5
3
4
(3) G
2.85 mm
Ordering Information:
Si3454ADV-T1-E3 (Lead (Pb)-free)
Si3454ADV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
A4xxx
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.7
2.0
1.3
- 55 to 150
4.5
3.6
20
1.0
1.14
0.73
W
°C
5s
30
± 20
3.4
2.7
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
30
Maximum
62.5
110
36
°C/W
Unit
Document Number: 71108
S09-0765-Rev. D, 04-May-09
www.vishay.com
1

SI3454ADV-T1 Related Products

SI3454ADV-T1 SI3454ADV-T1-E3 SI3454ADV-T1-GE3
Description MOSFET 30V 4.5A MOSFET 30V 4.5A 0.06Ohm MOSFET 30V 4.5A 2.0W 60mohm @ 4.5V
Is it Rohs certified? incompatible conform to conform to
Maker Vishay Vishay Vishay
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 3.4 A 3.4 A 3.4 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W 2 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) PURE MATTE TIN
Is it lead-free? - Lead free Lead free
Parts packaging code - TSOP TSOP
package instruction - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts - 6 6
Minimum drain-source breakdown voltage - 30 V 30 V
Maximum drain current (ID) - 3.4 A 3.4 A
Maximum drain-source on-resistance - 0.06 Ω 0.06 Ω
JESD-30 code - R-PDSO-G6 R-PDSO-G6
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 6 6
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 40 30
Transistor component materials - SILICON SILICON
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