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MPS2222G

Description
Bipolar Transistors - BJT 600mA 60V NPN
CategoryDiscrete semiconductor    The transistor   
File Size87KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPS2222G Overview

Bipolar Transistors - BJT 600mA 60V NPN

MPS2222G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
Vdc
60
75
V
EBO
MPS2222
MPS2222A
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
mW
mW/°C
3
STRAIGHT LEAD
BULK PACK
12
5.0
6.0
600
mAdc
Vdc
TO−92
CASE 29
STYLE 1
1
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MPS2222
MPS2222A
Collector −Base Voltage
MPS2222
MPS2222A
Emitter −Base Voltage
V
CBO
Symbol
V
CEO
30
40
Value
Unit
Vdc
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAMS
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MPS
2222
AYWW
G
G
MPS2
222A
AYWW
G
G
MPS2222
MPS2222A
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Preferred
devices are recommended choices for future use
and best overall value.
1
March, 2007 − Rev. 3
Publication Order Number:
MPS2222/D

MPS2222G Related Products

MPS2222G MPS2222ARLRAG MPS2222ARLRPG MPS2222ARLRMG
Description Bipolar Transistors - BJT 600mA 60V NPN NPN Bipolar Small Signal Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL NPN Bipolar Small Signal Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD NPN Bipolar Small Signal Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD
Brand Name ON Semiconductor onsemi onsemi onsemi
Is it lead-free? Lead free Lead free Lead free Lead free
Parts packaging code TO-92 TO-92 (TO-226) 5.33mm Body Height TO-92 (TO-226) 5.33mm Body Height TO-92 (TO-226) 5.33mm Body Height
package instruction CYLINDRICAL, O-PBCY-T3 LEAD FREE, CASE 29-11, TO-226, 3 PIN LEAD FREE, CASE 29-11, TO-226, 3 PIN LEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts 3 3 3 3
Manufacturer packaging code 29-11 29-11 29-11 29-11
Reach Compliance Code compliant compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 30 V 40 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 35 35 35
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e1 e1 e1 e1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 300 MHz 300 MHz 300 MHz
Factory Lead Time 1 week - 4 weeks 4 weeks
Objectid - 2025417303 2025417306 2063259151
Samacsys Manufacturer - onsemi onsemi onsemi
Samacsys Modified On - 2023-11-21 23:28:26 2023-09-15 13:18:36 2023-09-15 13:18:36
Maximum off time (toff) - 285 ns 285 ns 285 ns
Maximum opening time (tons) - 35 ns 35 ns 35 ns

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