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BC857CT-7-F

Description
Bipolar Transistors - BJT PNP BIPOLAR
CategoryDiscrete semiconductor    The transistor   
File Size68KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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BC857CT-7-F Overview

Bipolar Transistors - BJT PNP BIPOLAR

BC857CT-7-F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, ULTRA SMALL, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Samacsys DescriptionTRANSISTOR
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Complementary NPN Types Available (BC847AT,BT,CT)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4 and 5)
A
C
TOP VIEW
B
G
H
K
M
E
B C
SOT-523
Dim
A
B
C
D
G
H
N
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
Case: SOT-523
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking Code: See Table Below & Diagram on Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.002 grams (approximate)
J
K
L
M
N
α
J
D
L
Type
BC857AT
BC857BT
BC857CT
Marking
3V
3W
3G
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
-50
-45
-5.0
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
f
T
C
OB
NF
Min
-50
-45
-5
125
220
420
-600
100
Typ
290
520
-700
-900
Max
250
475
800
-300
-650
-750
-820
-15
-4.0
4.5
10
Unit
V
V
V
mV
mV
mV
NA
µA
MHz
pF
dB
Test Condition
I
C
= 10μA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1μA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
V
CB
= -10V, f = 1.0MHz
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0KΩ, f = 1.0KHz,
BW = 200Hz
Characteristic
Collector-Base Breakdown Voltage
(Note 3)
Collector-Emitter Breakdown Voltage
(Note 3)
Emitter-Base Breakdown Voltage
(Note 3)
DC Current Gain
(Note 3) Current Gain A
B
C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
(Note 3)
(Note 3)
(Note 3)
(Note 3)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30275 Rev. 9 - 2
1 of 3
www.diodes.com
BC857AT, BT, CT
© Diodes Incorporated

BC857CT-7-F Related Products

BC857CT-7-F BC857BT-7-F
Description Bipolar Transistors - BJT PNP BIPOLAR Bipolar Transistors - BJT PNP BIPOLAR
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 18 weeks 19 weeks
Other features HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 420 220
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1
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