Operating Temperature Range ........................... -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -55°C to +125°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
ESD Protection (All Pins, Human Body Model) ..................±2kV
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........34°C/W
Junction-to-Case Thermal Resistance (θ
JC
) .....................3°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Recommended Operating Conditions
(T
A
= -40°C to +85°C, unless otherwise noted.) (Notes 2, 3)
PARAMETER
Supply Voltage
Input Logic 1
(RST, SCK, DIN,
CE)
Input Logic 0
(RST, SCK, DIN,
CE)
Input Logic 1 (32KX1)
Input Logic 0 (32KX1)
SYMBOL
V
CC
V
IH
V
IL
V
IH32KX1
V
IL32KX1
CONDITIONS
MIN
2.3
V
CC
x 0.7
-0.3
V
CC
x 0.85
-0.3
TYP
3.0
MAX
3.6
V
CC
+ 0.3
V
CC
x 0.3
V
CC
+ 0.3
V
CC
x 0.15
UNITS
V
V
V
V
V
Electrical Characteristics
(V
CC
= 2.3V to 3.6V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.0V and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Input Leakage
(RST, SCK, DIN,
CE)
Output Leakage
(INT, T1,T2,T3,T4)
Output Voltage Low (32KOUT)
Output Voltage High (32KOUT)
Output Voltage High
(DOUT, CMP_OUT/UP_DN)
Output Voltage High (TC)
Output Voltage High
(Launch_UP, Launch_DN)
Output Voltage Low (INT, DOUT,
CMP_OUT/UP_DN)
SYMBOL
I
L
O
L
V
OL32K
V
OH32K
V
OH
V
OHTC
V
OHLAUCH
V
OL
2mA
-1mA
-4mA
V
CC
= 3.3V, I
OUT
= -4mA
V
CC
= 3.3V, I
OUT
= -50mA
4mA
0.8 x V
CC
0.8 x V
CC
2.9
2.8
3.1
3.0
0.2 x V
CC
CONDITIONS
MIN
-0.1
-0.1
TYP
MAX
+0.1
+0.1
0.2 x V
CC
UNITS
µA
µA
V
V
V
V
V
V
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Maxim Integrated
│
2
MAX35102
Time-to-Digital Converter
Without RTC
Electrical Characteristics (continued)
(V
CC
= 2.3V to 3.6V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.0V and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
Pulldown Resistance (TC)
Input Voltage Low (TC)
Output Voltage Low
(Launch_UP, Launch_DN)
Resistance (T1, T2, T3, T4)
Input Capacitance
(CE, SCK, DIN,
RST)
RST
Low Time
CURRENT
Standby Current
32kHz OSC Current
4MHz OSC Current
LDO Bias Current
Time Measurement Unit Current
Calculator Current
Device Current Drain
ANALOG RECEIVER
Analog Input Voltage
(STOP_UP, STOP_DN)
Input Offset Step Size
STOP_UP/STOP_DN Bias Voltage
Receiver Sensitivity
TIME MEASUREMENT UNIT
Measurement Range
Time Measurement Accuracy
Time Measurement Resolution
EXECUTION TIMES
Power-On-Reset Time
INIT Command Time
CAL Command Time
t
RESET
t
INIT
t
CAL
Reset to POR INT
Command received when INIT bit set
Command received when CAL bit set
275
2.5
1.25
µs
ms
ms
t
MEAS
t
ACC
t
RES
Time of flight
Differential time measurement
8
20
3.8
8000
µs
ps
ps
V
ANA
V
STEP
V
BIAS
V
ANA
Stop hit detect level (Note 5)
10
10
700
1
V
CC
x (3/8)
V
CC
x
(3/8)
2x
mV
P-P
mV
V
mV
P-P
I
DDQ
I
32KHZ
I
4MHZ
I
CCLDO
I
CCTMU
I
CCCPU
I
CC3
TOF_DIFF = 2 per second (3 hits),
temperature = 1 per 30s
No oscillators running, T
A
= +25°C
32kHz oscillator only (Note 4)
4MHz oscillator only (Note 4)
I
CCCPU
= 0 (Note 4)
(Note 4)
0.1
0.5
40
15
4.5
0.75
5.5
1
0.9
85
50
8
1.7
µA
µA
µA
µA
mA
mA
µA
SYMBOL
R
TC
V
ILTC
V
OLLAUCH
R
ON
C
IN
t
RST
Not tested
V
CC
= 3.3V, I
OUT
= 50mA
CONDITIONS
MIN
650
TYP
1000
0.36 x V
CC
0.2
1
7
100
0.4
MAX
1500
UNITS
Ω
V
V
Ω
pF
ns
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Maxim Integrated
│
3
MAX35102
Time-to-Digital Converter
Without RTC
Electrical Characteristics (continued)
PARAMETER
SERIAL PERIPHERAL INTERFACE
DIN to SCK Setup
SCK to DIN Hold
SCK to DOUT Delay
SCK Low Time
SCK High Time
SCK Frequency
CE
to SCK Setup
SCK to
CE
Hold
CE
Inactive Time
CE
to DOUT High Impedance
t
DC
t
CDH
t
CDD
t
CL
t
CH
t
CLK
t
CC
t
CCH
t
CWH
t
CCZ
SYMBOL
(V
CC
= 2.3V to 3.6V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.0V and T
A
= +25°C.) (Notes 2, 3)
CONDITIONS
MIN
TYP
MAX
20
2
5
V
CC
≥ 3.0V
V
CC
= 2.3V
V
CC
≥ 3.0V
V
CC
= 2.3V
5
2
5
25
50
25
4
30
4
20
10
40
20
40
20
20
20
UNITS
ns
ns
ns
ns
ns
MHz
ns
ns
ns
ns
Recommended External Crystal Characteristics
PARAMETER
32kHz Nominal Frequency
32kHz Frequency Tolerance
32kHz Load Capacitance
32kHz Series Resistance
4MHz Crystal Nominal Frequency
4MHz Crystal Frequency Tolerance
4MHz Crystal Load Capacitance
4MHz Crystal Series Resistance
4MHz Ceramic Nominal Frequency
4MHz Ceramic Frequency
Tolerance
4MHz Ceramic Load Capacitance
4MHz Ceramic Series Resistance
T
A
= +25°C
-0.5
30
30
SYMBOL
f
32K
Δf
32K
/f
32K
C
L32K
R
S32K
F
4M
Δf
4M
/f
4M
C
L4M
R
S4M
4.000
+0.5
T
A
= +25°C
-30
12.0
120
4.000
+30
T
A
= +25°C
-20
12.5
70
CONDITIONS
MIN
TYP
32.768
+20
MAX
UNITS
kHz
ppm
pF
kΩ
MHz
ppm
pF
Ω
MHz
%
pF
Ω
Note 2:
All voltages are referenced to ground. Current entering the device are specified as positive and currents exiting the device
are negative.
Note 3:
Limits are 100% production tested at T
A
= +25°C. Limits over the operating temperature range and relevant supply voltage
range are guaranteed by design and characterization.
Note 4:
Currents are specified as individual block currents. Total current for a point in time can be calculated by taking the standby
current and adding any block currents that are active at that time.
Note 5:
Receiver sensitivity includes performance degradation contributed by STOP_UP and STOP_DN device pin input offset volt-
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