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GP30K

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size145KB,2 Pages
ManufacturerFCI [First Components International]
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GP30K Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

Data Sheet
3.0 Amp MEGARECTIFIERS
Mechanical Dimensions
JEDEC
D0-201AD
.190
.210
.285
.375
1.00 Min.
GP30A . . . 30M Series
Description
.050 typ.
Features
n
HIGH TEMPERATURE METALLURGI-
CALLY BONDED CONSTRUCTION
n
SINTERED GLASS CAVITY-FREE
JUNCTION
n
3.0 AMP OPERATION @ T
A
= 55°C, WITH
NO THERMAL RUNAWAY
n
TYPICAL I
R
< 0.1
µAmp
Electrical Characteristics @ 25
o
C.
Maximum Ratings
Peak Repetitive Reverse Voltage...V
RRM
RMS Reverse Voltage...V
R(rms)
DC Blocking Voltage...V
DC
Average Forward Rectified Current...I
F(av)
Current 3/8" Lead Length @ T
A
= 55°C
Non-Repetitive Peak Forward Surge Current...I
FSM
8.3mS, ½ Sine Wave Superimposed on Rated Load
Forward Voltage @ 3.0A...V
F
Full Load Reverse Current...I
R
(av)
Full Cycle Average @ T
A
= 55°C
DC Reverse Current...I
R
@ Rated DC Blocking Voltage
T
A
= 25°C
T
A
= 150°C
GP30A . . . 30M Series
GP30A GP30B
50
35
50
100
70
100
GP30D
200
140
200
GP30G GP30J
400
280
400
600
420
600
GP30K GP30M
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
µAmps
............................................. 3.0 ...............................................
............................................. 1 2 5 ...............................................
< ...... 1.2 ...... > < ............................. 1.1 ........................... >
............................................. 1 0 0 ...............................................
............................................. 5.0 ...............................................
............................................. 1 0 0 ...............................................
............................................. 4 0 ...............................................
............................................. 2 0 ...............................................
............................................. 3.0 ...............................................
......................................... -65 to 175 ..........................................
µAmps
pF
°C
/ W
µS
°C
Typical Junction Capacitance...C
J
(Note 1)
Typical Thermal Resistance...R
θJA
(Note 2)
Typical Reverse Recovery Time...t
RR
(Note 3)
Operating & Storage Temperature Range...T
J
, T
STRG
Page 6-14

GP30K Related Products

GP30K GP30A GP30D GP30B GP30G GP30J
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
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