BZV55-B10,115 datasheet, PDF - EEWORLD Datasheet

BZV55-B10,115: DescriptionZener Diodes 500MW 10V; CategoryDiscrete semiconductor diode; File Size692KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BZV55-B10,115 Overview

Zener Diodes 500MW 10V

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Manufacturer packaging code	SOD80C
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	20 Ω
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Nominal reference voltage	10 V
Maximum reverse current	0.2 µA
surface mount	YES
technology	ZENER
Terminal surface	Tin (Sn)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Voltage temperatureCoeff-Max	8 mV/°C
Maximum voltage tolerance	2%
Working test current	5 mA

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