IS66WV51216DALL
IS66/67WV51216DBLL
8Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
FEATURES
• High-speed access time:
– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
– 55ns (IS66/67WV51216DBLL)
AUGUST 2014
• CMOS low power operation
• Single power supply
– V
dd
= 1.7V-1.95V (IS66WV51216dALL)
– V
dd
= 2.5V-3.6V
(IS66/67WV51216dBLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using
ISSI
's high-
performance CMOS technology. his highly reliable process
T
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOw
(deselected) or when
CS1
is
LOw,
CS2 is
HIGH
and both
LB
and
UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOw write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (LB)
access.
The IS66wV51216DALL and IS66/67wV51216DBLL are
packaged in the JEDEC standard 48-ball mini BGA (6mm
x 8mm) and
44-Pin TSOP (TYPE II). The device is aslo
available for die sales.
DESCRIPTION
The
ISSI
IS66WV51216DALL and IS66/67WV51216DBLL
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
08/25/2014
1
IS66WV51216DALL
IS66/67WV51216DBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
write
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
d
out
High-Z
d
out
d
In
High-Z
d
In
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
out
d
out
High-Z
d
In
d
In
V
dd
Current
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
cc
I
cc
I
cc
I
cc
Note:
CS2 input signal pin is only available for 48-ball mini BGA package parts. CS2 input is internally enabled for 44-pin TSOP-II pack-
age parts.
OPERATING RANGE (V
dd
)
Range
Ambient Temperature
IS66WV51216DALL
(70ns)
IS66WV51216DBLL
(55ns, 70ns)
IS67WV51216DBLL
(55ns, 70ns)
Industrial
–40°C to +85°C
1.7V - 1.95V
–
–
2.5V - 3.6V
–
–
–
2.5V - 3.6V
2.5V - 3.6V
Automotive, A1 –40°C to +85°C
Automotive, A2 –40°C to +105°C
POWER-UP INITIALIzATION
IS66wV512616DALL/DBLL and IS67wV512616DBLL include an on-chip voltage sensor used to launch the power-up initialization
process. when VDD reaches a stable level at or above the VDD (min) , the device will require 50μs to complete its self-initialization
process. During the initialization period,
CS should remain HIGH. when initialization is complete, the device is ready for normal operation.
≥ 50us
VDD (min)
VDD
0V
Device Initialization
Device for Normal Operation
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
08/25/2014
3
IS66WV51216DALL
IS66/67WV51216DBLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
BIAS
V
dd
t
Stg
P
t
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
dd
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
dd
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 2.5V-3.6V
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Parameter
Output HIGH Voltage
Output LOw Voltage
Input HIGH Voltage
(1)
Input LOw Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
Min.
2.2
—
2.2
–0.2
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.6
1
1
Unit
V
V
V
V
µA
μA
I
oH
=
-1 mA
2.5-3.6V
I
oL
=
2.1 mA
2.5-3.6V
2.5-3.6V
2.5-3.6V
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Notes:
1. V
ILL
(min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
V
IHH
(max.) = V
dd
+ 2.0V AC (pulse width < 10ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 1.7V-1.95V
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Parameter
Output HIGH Voltage
Output LOw Voltage
Input HIGH Voltage
(1)
Input LOw Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
I
oH
=
-0.1 mA
1.7-1.95V
I
oL
=
0.1 mA
1.7-1.95V
1.7-1.95V
1.7-1.95V
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
dd
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
μA
Notes:
1. V
ILL
(min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
V
IHH
(max.) = V
dd
+ 1.0V AC (pulse width < 10ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
08/25/2014
51mcu
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