S3AB - S3MB
Taiwan Semiconductor
3A, 50V - 1000V Surface Mount Rectifier
FEATURES
●
●
●
●
●
Glass passivated chip junction
Ideal for automated placement
Low forward voltage drop
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
3
50 - 1000
80
150
UNIT
A
V
A
°C
DO-214AA (SMB)
Single Die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix “H” means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
SYMBOL
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
S3AB S3BB S3DB S3GB S3JB S3KB S3MB UNIT
S3AB S3BB S3DB S3GB S3JB S3KB S3MB
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
V
3
A
80
- 55 to +150
- 55 to +150
A
°C
°C
1
Version:L1705
S3AB - S3MB
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
SYMBOL
R
ӨJL
LIMIT
10
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 3A,T
J
= 25°C
(2)
SYMBOL
V
F
I
R
C
J
t
rr
TYP
-
-
-
40
1500
MAX
1.15
10
250
-
-
UNIT
V
µA
µA
pF
ns
Reverse current @ rated V
R
per diode
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
ORDERING INFORMATION
PART NO.
S3xB
(Note 1)
PART NO.
SUFFIX
PACKING
CODE
R5
H
R4
M4
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note:
1. "x" defines voltage from 50V (S3AB) to 1000V (S3MB)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
S3ABHR5G
PART NO.
S3AB
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:L1705
S3AB - S3MB
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
100
Fig.2 Typical Junction Capacitance
3
CAPACITANCE (pF)
RESISTIVE OR
INDUCTIVE LOAD
2.5
2
1.5
1
0.5
0
0
20
40
60
80
100
120
(
°
C)
10
140
160
1
1
f=1.0MHz
Vsig=50mVp-p
10
REVERSE VOLTAGE (V)
100
LEAD TEMPERATURE
Fig.3 Typical Reverse Characteristics
100
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
10
Fig.4 Typical Forward Characteristics
1
10
UF1DLW
T
J
=125°C
10
T
J
=125°C
1
1
0.01
Pulse width
Pulse Width=300μs
1% Duty Cycle
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.001
0.1
0.6
0.3
0.7
0.4
0.8
0.5
0.9
0.6
1
0.7
1.1
1.2
FORWARD VOLTAGE (V)
3
Version:L1705
(A)
0.1
T
J
=25°C
S3AB - S3MB
Taiwan Semiconductor
Fig.5 Maximum Non-repetitive Forward Surge Current
100
PEAK FORWARD SURGE URRENT (A)
8.3ms Single Half Sine Wave
10
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:L1705
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