EEWORLDEEWORLDEEWORLD

Part Number

Search

M29W800DB70N1

Description
NOR Flash 1Mx8 or 512Kx16 70ns
Categorystorage    storage   
File Size285KB,42 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29W800DB70N1 Online Shopping

Suppliers Part Number Price MOQ In stock  
M29W800DB70N1 - - View Buy Now

M29W800DB70N1 Overview

NOR Flash 1Mx8 or 512Kx16 70ns

M29W800DB70N1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,15
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width12 mm
M29W800DT
M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
ACCESS TIMES: 45, 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program
algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W800DT: 22D7h
– Bottom Device Code M29W800DB:
225Bh
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8mm
September 2004
1/42

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号