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IRF740ALPBF

Description
MOSFET N-Chan 400V 10 Amp
CategoryDiscrete semiconductor    The transistor   
File Size213KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRF740ALPBF Overview

MOSFET N-Chan 400V 10 Amp

IRF740ALPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
Factory Lead Time6 weeks
Avalanche Energy Efficiency Rating (Eas)630 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
36
9.9
16
Single
D
FEATURES
400
0.55
I
2
PAK
(TO-262)
D
2
PAK
(TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and Current
• Effective C
oss
specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
G
D
S
D
S
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching
TYPICAL SMPS TOPOLOGIES
S
N-Channel MOSFET
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF740AS-GE3
IRF740ASPbF
SiHF740AS-E3
D
2
PAK (TO-263)
SiHF740ASTRL-GE3
a
IRF740ASTRLPbF
a
SiHF740ASTL-E3
a
D
2
PAK (TO-263)
SiHF740ASTRR-GE3
a
IRF740ASTRRPbF
a
SiHF740ASTR-E3
a
I
2
PAK (TO-262)
SiHF740AL-GE3
IRF740ALPbF
SiHF740AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
A
= 25 °C
T
C
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
400
± 30
10
6.3
40
1.0
630
10
12.5
3.1
125
5.9
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 12.6 mH, R
g
= 25
,
I
AS
= 10 A (see fig. 12).
c. I
SD
10 A, dI/dt
330 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91052
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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IRF740ALPBF IRF740ASTRR IRF740ASTRRPBF IRF740AS
Description MOSFET N-Chan 400V 10 Amp MOSFET N-Chan 400V 10 Amp MOSFET N-Chan 400V 10 Amp MOSFET N-Chan 400V 10 Amp
Is it Rohs certified? conform to incompatible conform to incompatible
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code compliant unknown compliant unknown
Avalanche Energy Efficiency Rating (Eas) 630 mJ 630 mJ 630 mJ 630 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 400 V 400 V
Maximum drain current (Abs) (ID) 10 A 10 A 10 A 10 A
Maximum drain current (ID) 10 A 10 A 10 A 10 A
Maximum drain-source on-resistance 0.55 Ω 0.55 Ω 0.55 Ω 0.55 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e3 e0
Number of components 1 1 1 1
Number of terminals 3 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 40 A 40 A 40 A 40 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES YES
Terminal surface Matte Tin (Sn) TIN LEAD Matte Tin (Sn) TIN LEAD
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 NOT SPECIFIED 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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