SI4430DY datasheet, PDF - EEWORLD Datasheet

SI4430DY: DescriptionMOSFET 30V 23A 3.5W; CategoryDiscrete semiconductor The transistor; File Size51KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MOSFET 30V 23A 3.5W

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Configuration	Single
Maximum drain current (Abs) (ID)	15 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.6 W
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	SI4430DY	SI4430DY-T1-E3
Description	MOSFET 30V 23A 3.5W	MOSFET 30V 23A 3.5W
Is it Rohs certified?	incompatible	conform to
Maker	Vishay	Vishay
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	Single	SINGLE WITH BUILT-IN DIODE
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)

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