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2SA2154-Y(TPL3)

Description
Bipolar Transistors - BJT 100mA -0.3V
CategoryDiscrete semiconductor    The transistor   
File Size142KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA2154-Y(TPL3) Overview

Bipolar Transistors - BJT 100mA -0.3V

2SA2154-Y(TPL3) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Base Number Matches1
2SA2154
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
General-Purpose Amplifier Applications
Unit: mm
0.2±0.05
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
0.15±0.05
0.6±0.05
Unit
V
V
V
mA
mA
mW
°C
°C
+0.02
High voltage and high current
: V
CEO
=
−50
V, I
C
=
−100
mA (max)
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
High h
FE
:
h
FE
= 120~400
Complementary to 2SC6026
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
−30
50
150
−55~150
0.48
-0.04
0.35±0.05
fSM
JEDEC
1.BASE
2.EMITTER
3.COLLECTOR
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-1E1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.6 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
120
80
Typ.
−0.18
1.6
Max
−0.1
−0.1
400
−0.3
Unit
μA
μA
V
MHz
pF
Note: h
FE
classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
h
FE
Rank
8F
1
2007-11-01

2SA2154-Y(TPL3) Related Products

2SA2154-Y(TPL3) 2SA2154-GR(TPL3)
Description Bipolar Transistors - BJT 100mA -0.3V Bipolar Transistors - BJT 100mA -0.3V
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
Base Number Matches 1 1

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