KSD1588OTU datasheet, PDF - EEWORLD Datasheet

KSD1588OTU: DescriptionBipolar Transistors - BJT NPN Epitaxial Sil; Categorysemiconductor Discrete semiconductor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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Bipolar Transistors - BJT NPN Epitaxial Sil

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-220F-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	0.5 V
Maximum DC Collector Current	7 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	200
Height	9.19 mm
Length	10.16 mm
Packaging	Tube
Width	4.7 mm
Continuous Collector Current	7 A
DC Collector/Base Gain hfe Min	40
Pd - Power Dissipation	2000 mW
Factory Pack Quantity	50
Unit Weight	0.080072 oz

	KSD1588OTU	KSD1588YTU	KSD1588RTU
Description	Bipolar Transistors - BJT NPN Epitaxial Sil	Bipolar Transistors - BJT NPN Epitaxial Sil	TRANS NPN 60V 7A TO-220F
Configuration	Single	SINGLE	-

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