GS8644V36E-225 datasheet, PDF - EEWORLD Datasheet

GS8644V36E-225: Description4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs; Categorystorage storage; File Size833KB，40 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8644V36E-225 Overview

4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	BGA,
Contacts	165
Reach Compliance Code	compli
ECCN code	3A991.B.2.B
Maximum access time	6.5 ns
Other features	PIPELINED OR FLOW-THROUGH ARCHITECTURE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	75497472 bi
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX36
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.6 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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